纳米二氧化硅对 FeSi 软磁复合材料微结构和磁性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yu Peng
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引用次数: 0

摘要

以纳米二氧化硅/环氧硅树脂(ESR)为绝缘层,制备了铁硅软磁复合材料(SMC),并研究了二氧化硅含量对软磁复合材料微观结构和磁性能的影响。在环氧硅树脂中引入适当的纳米二氧化硅可提高密度、磁导率和电阻率,从而降低软磁复合材料的磁损耗。二氧化硅纳米粒子分布在 ESR 中并包覆在磁性金属颗粒表面,二氧化硅纳米粒子的加入导致绝缘涂层的形成,从而降低了磁损耗,这可归因于涡流损耗的降低。过量添加二氧化硅会导致二氧化硅颗粒在磁性颗粒之间聚集,从而破坏磁性能。二氧化硅含量为 0.50 wt% 的 SMC 具有最佳性能,有效磁导率高(94),磁损耗低(152.03 mW/cm3,100 kHz 和 40 mT 时)。此外,还讨论了 SiO2 颗粒的引入对微观结构和磁性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effects of nano-SiO2 on microstructure and magnetic properties of FeSi soft magnetic composites

Effects of nano-SiO2 on microstructure and magnetic properties of FeSi soft magnetic composites

FeSi soft magnetic composites (SMCs) were fabricated using nano-SiO2/epoxy silicone resin (ESR) as insulating layers, and the influence of SiO2 content on microstructure and magnetic properties of soft magnetic composites were investigated. The introduction of suitable nano-SiO2 into epoxy silicone resin increase the density, permeability and resistivity which then reduce of magnetic loss of SMCs. SiO2 nanoparticles distribute in the ESR and coat on the magnetic metal particle surface, and the formation of insulating coating caused by the addition of SiO2 nano-particles reduce the magnetic loss and which can be attributed to the reduction of eddy-current loss. Excess SiO2 addition result in the aggregation of SiO2 particle between magnetic particles, which then destroy magnetic performance. The SMCs with 0.50 wt% SiO2 has the optimized performance with high effective permeability (94) and reduced magnetic loss (152.03 mW/cm3, at 100 kHz and 40 mT). And the influence of introduce of SiO2 particles on the microstructure and magnetic properties was discussed.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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