{"title":"成型工艺对 (Mg1-xZnx)2SiO4 高频介电陶瓷烧结和性能的影响","authors":"Hanbi Zhang, Xiangchun Liu, Kai Zhang, Jiayan Guan, Danni Chen, Miao Zhang, Jiahao Liu, Ziyao Wei, Feng Gao","doi":"10.1007/s10854-024-13440-4","DOIUrl":null,"url":null,"abstract":"<div><p>(Mg<sub>1-<i>x</i></sub>Zn<sub><i>x</i></sub>)<sub>2</sub>SiO<sub>4</sub> (<i>x</i> = 0.2, 0.4, 0.6, 0.8) ceramics were prepared by different molding methods, the sintering characteristics and high-frequency dielectric properties of ceramics with different ratios were studied, and the optimum Mg/Zn ratio was determined under the experimental conditions. X-ray diffraction (XRD) patterns show that the specimens have a Forsterite structure when <i>x</i> < 0.4, while when <i>x</i> ≥ 0.4, the specimens have a Willemite structure. SEM images suggested that the density of hot pressing (Mg<sub>0.4</sub>Zn<sub>0.6</sub>)<sub>2</sub>SiO<sub>4</sub> ceramics is better than that of dry pressing. The (Mg<sub>1-<i>x</i></sub>Zn<sub><i>x</i></sub>)<sub>2</sub>SiO<sub>4</sub> ceramics obtained by hot pressing show an overall increase in bulk density. (Mg<sub>0.4</sub>Zn<sub>0.6</sub>)<sub>2</sub>SiO<sub>4</sub> ceramics have the best high-frequency dielectric properties when sintered at 1325 °C, and the performance parameters of dry pressing and hot pressing are <i>ε</i><sub><i>r</i></sub> = 6.74, <i>tanδ</i> = 8.88 × 10<sup>–4</sup> and <i>ε</i><sub><i>r</i></sub> = 6.36, <i>tanδ</i> = 1.35 × 10<sup>–3</sup>, respectively.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of molding process on sintering and properties of (Mg1-xZnx)2SiO4 high-frequency dielectric ceramics\",\"authors\":\"Hanbi Zhang, Xiangchun Liu, Kai Zhang, Jiayan Guan, Danni Chen, Miao Zhang, Jiahao Liu, Ziyao Wei, Feng Gao\",\"doi\":\"10.1007/s10854-024-13440-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>(Mg<sub>1-<i>x</i></sub>Zn<sub><i>x</i></sub>)<sub>2</sub>SiO<sub>4</sub> (<i>x</i> = 0.2, 0.4, 0.6, 0.8) ceramics were prepared by different molding methods, the sintering characteristics and high-frequency dielectric properties of ceramics with different ratios were studied, and the optimum Mg/Zn ratio was determined under the experimental conditions. X-ray diffraction (XRD) patterns show that the specimens have a Forsterite structure when <i>x</i> < 0.4, while when <i>x</i> ≥ 0.4, the specimens have a Willemite structure. SEM images suggested that the density of hot pressing (Mg<sub>0.4</sub>Zn<sub>0.6</sub>)<sub>2</sub>SiO<sub>4</sub> ceramics is better than that of dry pressing. The (Mg<sub>1-<i>x</i></sub>Zn<sub><i>x</i></sub>)<sub>2</sub>SiO<sub>4</sub> ceramics obtained by hot pressing show an overall increase in bulk density. (Mg<sub>0.4</sub>Zn<sub>0.6</sub>)<sub>2</sub>SiO<sub>4</sub> ceramics have the best high-frequency dielectric properties when sintered at 1325 °C, and the performance parameters of dry pressing and hot pressing are <i>ε</i><sub><i>r</i></sub> = 6.74, <i>tanδ</i> = 8.88 × 10<sup>–4</sup> and <i>ε</i><sub><i>r</i></sub> = 6.36, <i>tanδ</i> = 1.35 × 10<sup>–3</sup>, respectively.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13440-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13440-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of molding process on sintering and properties of (Mg1-xZnx)2SiO4 high-frequency dielectric ceramics
(Mg1-xZnx)2SiO4 (x = 0.2, 0.4, 0.6, 0.8) ceramics were prepared by different molding methods, the sintering characteristics and high-frequency dielectric properties of ceramics with different ratios were studied, and the optimum Mg/Zn ratio was determined under the experimental conditions. X-ray diffraction (XRD) patterns show that the specimens have a Forsterite structure when x < 0.4, while when x ≥ 0.4, the specimens have a Willemite structure. SEM images suggested that the density of hot pressing (Mg0.4Zn0.6)2SiO4 ceramics is better than that of dry pressing. The (Mg1-xZnx)2SiO4 ceramics obtained by hot pressing show an overall increase in bulk density. (Mg0.4Zn0.6)2SiO4 ceramics have the best high-frequency dielectric properties when sintered at 1325 °C, and the performance parameters of dry pressing and hot pressing are εr = 6.74, tanδ = 8.88 × 10–4 and εr = 6.36, tanδ = 1.35 × 10–3, respectively.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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