可控合成具有不同形态的 BiVO4 光催化剂,以便在过硫酸盐存在下降解不同的染料

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Meng Tang, Lijia Zheng, Ming Ge
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引用次数: 0

摘要

通过调节前驱体溶液的 pH 值,利用溶解热制备了具有独特形态的 BiVO4 光催化剂。利用 XRD、SEM、EDS、FT-IR 和 UV-Vis DRS 对 BiVO4 催化剂的理化性质进行了表征。在过硫酸盐(PDS)的辅助下,所获得的 BiVO4 在可见光-LED 光照射下可有效降解阳离子染料罗丹明 B(RhB)和阴离子染料甲基橙(MO)。RhB 降解符合一阶动力学,而 MO 降解符合二阶动力学。短棒状 BiVO4(命名为 BiVO4-1)对 RhB 的降解效率最好,片状 BiVO4(命名为 BiVO4-9)对 MO 的降解率最高。讨论了一些重要操作因素(PDS 剂量、BiVO4 剂量、温度、无机阴离子和腐殖酸)对 RhB 和 MO 降解的影响。在BiVO4-1/PDS/Vis体系中,自由基途径(O2--、SO4--、-OH)和非自由基途径(1O2和h+)共同作用实现了RhB的降解;而在BiVO4-9/PDS/Vis体系中,MO的降解主要由非自由基氧化途径(1O2和h+)主导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Controllable synthesis of BiVO4 photocatalysts with distinct morphology toward different dyes degradation in the presence of peroxydisulfate

Controllable synthesis of BiVO4 photocatalysts with distinct morphology toward different dyes degradation in the presence of peroxydisulfate

BiVO4 photocatalysts with distinct morphology were solvothermally prepared by regulating the pH of precursor solution. The physicochemical properties of BiVO4 catalysts were characterized using XRD, SEM, EDS, FT-IR and UV-Vis DRS. With the assistance of peroxydisulfate (PDS), as-obtained BiVO4 could effectively degrade the cationic dye rhodamine B (RhB) and the anionic dye methyl orange (MO) under visible-LED-light illumination. RhB degradation obeys the first-order kinetic, while MO degradation complies with the second-order kinetic. Short stick-like BiVO4 (named as BiVO4-1) showed the best RhB degradation efficiency, and sheet-like BiVO4 (named as BiVO4-9) had the highest MO degradation rate. The influence of some important operating factors (PDS dose, BiVO4 dosage, temperature, inorganic anions and humic acid) on the degradation of RhB and MO were discussed. In the BiVO4-1/PDS/Vis system, the free radical pathway (O2•‒, SO4•‒, •OH) and the non-radical pathway (1O2 and h+) acted together to realize the degradation of RhB; however, in the BiVO4-9/PDS/Vis system, MO degradation was mainly dominated by the non-radical oxidation pathway (1O2 and h+).

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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