{"title":"作为光探测器的二维/一维 SnSe2/CNT 异质结构及其更好的光响应性","authors":"Mohit Tannarana, Pratik Pataniya, G. K. Solanki","doi":"10.1007/s10854-024-13385-8","DOIUrl":null,"url":null,"abstract":"<p>The present study reports the fabrication of a resistive device using SnSe<sub>2</sub>/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe<sub>2</sub> nanosheets. The SnSe<sub>2</sub>/CNT nanohybrid is prepared in the 70–30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe<sub>2</sub>/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300–200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on–off cycles under 80 mW/cm<sup>2</sup> polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe<sub>2</sub>/CNT-based photo-detector opens a new pathway in the application of 2D–1D heterostructure.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional/one-dimensional SnSe2/CNT heterostructure as a photo-detector and its improved photo-responsiveness\",\"authors\":\"Mohit Tannarana, Pratik Pataniya, G. K. Solanki\",\"doi\":\"10.1007/s10854-024-13385-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The present study reports the fabrication of a resistive device using SnSe<sub>2</sub>/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe<sub>2</sub> nanosheets. The SnSe<sub>2</sub>/CNT nanohybrid is prepared in the 70–30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe<sub>2</sub>/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300–200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on–off cycles under 80 mW/cm<sup>2</sup> polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe<sub>2</sub>/CNT-based photo-detector opens a new pathway in the application of 2D–1D heterostructure.</p>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s10854-024-13385-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10854-024-13385-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Two-dimensional/one-dimensional SnSe2/CNT heterostructure as a photo-detector and its improved photo-responsiveness
The present study reports the fabrication of a resistive device using SnSe2/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe2 nanosheets. The SnSe2/CNT nanohybrid is prepared in the 70–30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe2/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300–200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on–off cycles under 80 mW/cm2 polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe2/CNT-based photo-detector opens a new pathway in the application of 2D–1D heterostructure.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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