Dheeraj Kumar, Mohd Alam, Prajyoti Singh, Srishti Dixit, A. K. Ghosh, Sandip Chatterjee
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All samples exhibit semiconducting/insulating, and electrical conduction can be explained by Mott’s 3-D variable range hopping and small polaron hopping fitting. The magnetization numerical value decreases observed with increases in Ca concentration appears to be caused by increases in antiferromagnetic (AFM) phases. The double perovskite Y<sub>1.9</sub>Ca<sub>0.1</sub>CoMnO<sub>6</sub> and Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub> show ferromagnetic transition at transition temperatures T<sub>c </sub>~ 70 K and T<sub>c </sub>~ 68 K, respectively. The analysis of the samples’ zero fields cooled DC magnetic susceptibility as a function of temperature reveals Griffiths-like singularity features that arise as the concentration of Ca increases in the parent system. The Griffith-like phase exists in the sample Y-site with Ca-substitution is independent of the structural disorder caused by the John–Teller active Mn<sup>3+</sup>ions in sample <span>\\({\\text{Y}}_{1.5} {\\text{Ca}}_{0.5}\\)</span>CoMnO<sub>6</sub>. Field-dependent magnetization shows meta-magnetic behavior at low-temperature regions in Y<sub>1.9</sub>Ca<sub>0.1</sub>CoMnO<sub>6</sub> and Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub>. As the concentration of Ca increased from Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub> to Y<sub>1.5</sub>Ca<sub>0.5</sub>CoMnO<sub>6</sub> meta-magnetic behavior disappeared.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and magnetic properties of double perovskite Y2-xCaxCoMnO6 (x = 0.1, 0.2, 0.5)\",\"authors\":\"Dheeraj Kumar, Mohd Alam, Prajyoti Singh, Srishti Dixit, A. K. Ghosh, Sandip Chatterjee\",\"doi\":\"10.1007/s10854-024-13399-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The crystal structure, electronic, magnetic, and transport properties of the hole substituted (Ca<sup>2+</sup>) and partially B-site disordered double perovskite Y<sub>2-x</sub>Ca<sub>x</sub>CoMnO<sub>6</sub> system are studied. At room temperature, the samples demonstrated a monoclinic perovskite structure with a space group P2<sub>1</sub>/n which was confirmed by Rietveld refinement of X-ray diffraction data. Ultra-violet visible analysis of these samples shows a direct band gap including gap energy near about 1.50 eV. X-ray photoemission spectroscopy measurement shows that component Co and Mn ions exist in a mixed state (Co<sup>3+</sup>, Co<sup>2+</sup>, Mn<sup>3+</sup>, and Mn<sup>4+</sup>). All samples exhibit semiconducting/insulating, and electrical conduction can be explained by Mott’s 3-D variable range hopping and small polaron hopping fitting. The magnetization numerical value decreases observed with increases in Ca concentration appears to be caused by increases in antiferromagnetic (AFM) phases. The double perovskite Y<sub>1.9</sub>Ca<sub>0.1</sub>CoMnO<sub>6</sub> and Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub> show ferromagnetic transition at transition temperatures T<sub>c </sub>~ 70 K and T<sub>c </sub>~ 68 K, respectively. The analysis of the samples’ zero fields cooled DC magnetic susceptibility as a function of temperature reveals Griffiths-like singularity features that arise as the concentration of Ca increases in the parent system. The Griffith-like phase exists in the sample Y-site with Ca-substitution is independent of the structural disorder caused by the John–Teller active Mn<sup>3+</sup>ions in sample <span>\\\\({\\\\text{Y}}_{1.5} {\\\\text{Ca}}_{0.5}\\\\)</span>CoMnO<sub>6</sub>. Field-dependent magnetization shows meta-magnetic behavior at low-temperature regions in Y<sub>1.9</sub>Ca<sub>0.1</sub>CoMnO<sub>6</sub> and Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub>. As the concentration of Ca increased from Y<sub>1.8</sub>Ca<sub>0.2</sub>CoMnO<sub>6</sub> to Y<sub>1.5</sub>Ca<sub>0.5</sub>CoMnO<sub>6</sub> meta-magnetic behavior disappeared.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13399-2\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13399-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
研究了空穴取代(Ca2+)和部分 B 位无序双包晶 Y2-xCaxCoMnO6 体系的晶体结构、电子、磁性和传输特性。在室温下,样品呈现出空间群为 P21/n 的单斜包晶结构,这一点通过对 X 射线衍射数据进行里特维尔德细化得到了证实。对这些样品的紫外可见光分析表明,它们具有直接带隙,隙能接近 1.50 eV。X 射线光发射光谱测量显示,钴和锰离子以混合状态(Co3+、Co2+、Mn3+ 和 Mn4+)存在。所有样品都表现出半导体/绝缘性,电导可以用莫特三维变程跳变和小极子跳变拟合来解释。随着钙浓度的增加而观察到的磁化数值下降似乎是由反铁磁(AFM)相的增加引起的。双过氧化物 Y1.9Ca0.1CoMnO6 和 Y1.8Ca0.2CoMnO6 分别在转变温度 Tc ~ 70 K 和 Tc ~ 68 K 时出现铁磁转变。通过分析样品的零场冷却直流磁感应强度与温度的函数关系,可以发现随着母体系中 Ca 浓度的增加,会出现类似格里菲斯的奇异特征。样品 Y-位中存在的格里菲斯样相与样品 \({\text{Y}}_{1.5} {\text{Ca}}_{0.5}\)CoMnO6 中约翰-泰勒活性 Mn3+ 离子引起的结构紊乱无关。在 Y1.9Ca0.1CoMnO6 和 Y1.8Ca0.2CoMnO6 中,随磁场变化的磁化在低温区域显示出元磁性。随着 Ca 浓度的增加,从 Y1.8Ca0.2CoMnO6 到 Y1.5Ca0.5CoMnO6 的元磁行为消失了。
Electrical and magnetic properties of double perovskite Y2-xCaxCoMnO6 (x = 0.1, 0.2, 0.5)
The crystal structure, electronic, magnetic, and transport properties of the hole substituted (Ca2+) and partially B-site disordered double perovskite Y2-xCaxCoMnO6 system are studied. At room temperature, the samples demonstrated a monoclinic perovskite structure with a space group P21/n which was confirmed by Rietveld refinement of X-ray diffraction data. Ultra-violet visible analysis of these samples shows a direct band gap including gap energy near about 1.50 eV. X-ray photoemission spectroscopy measurement shows that component Co and Mn ions exist in a mixed state (Co3+, Co2+, Mn3+, and Mn4+). All samples exhibit semiconducting/insulating, and electrical conduction can be explained by Mott’s 3-D variable range hopping and small polaron hopping fitting. The magnetization numerical value decreases observed with increases in Ca concentration appears to be caused by increases in antiferromagnetic (AFM) phases. The double perovskite Y1.9Ca0.1CoMnO6 and Y1.8Ca0.2CoMnO6 show ferromagnetic transition at transition temperatures Tc ~ 70 K and Tc ~ 68 K, respectively. The analysis of the samples’ zero fields cooled DC magnetic susceptibility as a function of temperature reveals Griffiths-like singularity features that arise as the concentration of Ca increases in the parent system. The Griffith-like phase exists in the sample Y-site with Ca-substitution is independent of the structural disorder caused by the John–Teller active Mn3+ions in sample \({\text{Y}}_{1.5} {\text{Ca}}_{0.5}\)CoMnO6. Field-dependent magnetization shows meta-magnetic behavior at low-temperature regions in Y1.9Ca0.1CoMnO6 and Y1.8Ca0.2CoMnO6. As the concentration of Ca increased from Y1.8Ca0.2CoMnO6 to Y1.5Ca0.5CoMnO6 meta-magnetic behavior disappeared.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.