氧化方式对 Ag-SnO2Sb2O3 材料微观结构和氧化物分布的影响

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-07 DOI:10.1007/s10854-024-13451-1

Chunping Wu, Lejian Yu, Chengwei Zhao, Qiong Wu, Runzhang Huang, Meng Yuan, Guofu Xu

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引用次数: 0

摘要

利用内氧化技术制备的 Ag-SnO2Sb2O3 材料具有优异的电气性能。本文通过四种不同的氧化方式制备了 Ag-SnO2Sb2O3 材料。研究了氧化方式对微观结构和氧化物分布的影响，并探讨了 Ag-SnO2Sb2O3 材料的形成机理。在四种氧化方式中，坯料在空气+Ag2O中的氧化效果最好，氧化物分布最均匀，物理性能（相对密度：97.2%，硬度：57 Hv03，导电率：12.3 Ms/m）也最好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Influence of oxidation way on microstructure and oxides distribution of Ag–SnO2Sb2O3 materials

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Influence of oxidation way on microstructure and oxides distribution of Ag–SnO2Sb2O3 materials

Ag–SnO₂Sb₂O₃ materials prepared by internal oxidation technology have excellent electrical properties. Here Ag–SnO₂Sb₂O₃ materials are fabricated by four kinds of different oxidation ways. Influence of oxidation way on microstructure and oxides distribution is investigated and the formation mechanism of Ag–SnO₂Sb₂O₃ materials is discussed. The oxidation effect of billet oxidation in air + Ag₂O is the best and the oxides distribution is the most uniform and the physical properties (relative density: 97.2%, hardness: 57 Hv03 and electrical conductivity: 12.3 Ms/m) are also the best in the four kinds of oxidation ways.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.