K M’hammedi, L Talbi, M Berouaken, A Manseri, N Gabouze
{"title":"基于氧化镍装饰大孔硅异质结的氢气传感器","authors":"K M’hammedi, L Talbi, M Berouaken, A Manseri, N Gabouze","doi":"10.1007/s12034-024-03305-1","DOIUrl":null,"url":null,"abstract":"<div><p>A highly sensitive hydrogen gas sensor operating at room temperature made of macroporous silicon (MPS) coated with a thin NiO film was developed. MPS layer was shaped by electrochemical anodization on an n-type Si surface. Thereafter, p-type NiO film was deposited onto the MPS surface by electrodeposition method. The morphology of the NiO/MPS sample was characterized by scanning electron microscopy. Al electrical contacts for further measurements were deposited onto the structure NiO/MPS by evaporation technique under vacuum. Gas sensing performances were measured to various H<sub>2</sub> concentrations ranging from 122 to 1342 ppm at room temperature. The results showed that the electrical behaviour of synthesized NiO/MPS sensor is similar to that of a diode, which can be used to detect H<sub>2</sub> gas at low concentrations, which reveals high sensitivity, fast response and recovery times working at room temperature.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":"47 3","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hydrogen gas sensor based on NiO decorated macroporous silicon heterojunction\",\"authors\":\"K M’hammedi, L Talbi, M Berouaken, A Manseri, N Gabouze\",\"doi\":\"10.1007/s12034-024-03305-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A highly sensitive hydrogen gas sensor operating at room temperature made of macroporous silicon (MPS) coated with a thin NiO film was developed. MPS layer was shaped by electrochemical anodization on an n-type Si surface. Thereafter, p-type NiO film was deposited onto the MPS surface by electrodeposition method. The morphology of the NiO/MPS sample was characterized by scanning electron microscopy. Al electrical contacts for further measurements were deposited onto the structure NiO/MPS by evaporation technique under vacuum. Gas sensing performances were measured to various H<sub>2</sub> concentrations ranging from 122 to 1342 ppm at room temperature. The results showed that the electrical behaviour of synthesized NiO/MPS sensor is similar to that of a diode, which can be used to detect H<sub>2</sub> gas at low concentrations, which reveals high sensitivity, fast response and recovery times working at room temperature.</p><h3>Graphical Abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":502,\"journal\":{\"name\":\"Bulletin of Materials Science\",\"volume\":\"47 3\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12034-024-03305-1\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03305-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Hydrogen gas sensor based on NiO decorated macroporous silicon heterojunction
A highly sensitive hydrogen gas sensor operating at room temperature made of macroporous silicon (MPS) coated with a thin NiO film was developed. MPS layer was shaped by electrochemical anodization on an n-type Si surface. Thereafter, p-type NiO film was deposited onto the MPS surface by electrodeposition method. The morphology of the NiO/MPS sample was characterized by scanning electron microscopy. Al electrical contacts for further measurements were deposited onto the structure NiO/MPS by evaporation technique under vacuum. Gas sensing performances were measured to various H2 concentrations ranging from 122 to 1342 ppm at room temperature. The results showed that the electrical behaviour of synthesized NiO/MPS sensor is similar to that of a diode, which can be used to detect H2 gas at low concentrations, which reveals high sensitivity, fast response and recovery times working at room temperature.
期刊介绍：
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.
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