基于有序碳纳米管 (CNT) 阵列的谐振器中的贡恩生成模式

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010184

I. O. Zolotovskii, A. S. Kadochkin, I. S. Panyaev, I. A. Rozhleys, D. G. Sannikov

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引用次数: 0

摘要

摘要我们发现并研究了基于有序半导体碳纳米管阵列的模型谐振腔中微波的产生机制。在现象学方法的框架内，发现了长度为 25-150 μm 的有序碳纳米管的贡恩效应，并研究了主要参数（电场变化、电极间距、触点电压等）的影响，结果表明激光期间的电子效率可达 13%。研究结果可用于设计新的谐振器结构，如基于有序纳米管阵列的紧凑型微波放大器和发射器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Gunn Generation Mode in a Resonator Based on an Array of Ordered Carbon Nanotubes (CNTs)

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Gunn Generation Mode in a Resonator Based on an Array of Ordered Carbon Nanotubes (CNTs)

Abstract

We find and study the generation regime of microwave waves in a model resonator cavity based on an array of ordered semiconductor carbon nanotubes. Within the framework of the phenomenological approach, the Gunn effect was discovered for aligned carbon nanotubes with a length of 25–150 μm, the influence of the main parameters (changes in the electric field, the distance between the electrodes, the voltage at the contacts, etc.) was studied and it was shown that the electronic efficiency during lasing can reach 13%. The results obtained can be used to design new resonator structures such as compact microwave amplifiers and emitters based on ordered arrays of nanotubes.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.