碲化镉汞分子束外延技术中 ZnTe 和 CdTe 缓冲层生长过程的原位椭偏控制

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010147

V. A. Shvets, D. V. Marin, M. V. Yakushev, S. V. Rykhlitskii

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引用次数: 0

摘要

摘要研究了用于镉汞碲外延的 ZnTe 和 CdTe 缓冲层生长过程中的原位椭偏控制问题。研究发现，对于 20 nm 的碲锌层，吸收边缘附近的光学常数的光谱依赖关系是平滑的，这表明薄膜中存在结构缺陷。研究表明，碲化镉生长表面的微凹凸是衡量薄膜层结构是否完美的标准，可以在早期阶段和稳定生长过程中使用椭偏仪进行测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

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In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

Abstract

The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.