最小汉明距离为 4 和 5 的稀疏代码用于提高 STT-MRAM 单元密度

{"title":"最小汉明距离为 4 和 5 的稀疏代码用于提高 STT-MRAM 单元密度","authors":"Thien An Nguyen, Jaejin Lee","doi":"10.1109/tmag.2024.3450962","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"6 1","pages":""},"PeriodicalIF":2.1000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sparse Code with Minimum Hamming Distances of 4 and 5 for Increasing the Density of STT-MRAM Cells\",\"authors\":\"Thien An Nguyen, Jaejin Lee\",\"doi\":\"10.1109/tmag.2024.3450962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":13405,\"journal\":{\"name\":\"IEEE Transactions on Magnetics\",\"volume\":\"6 1\",\"pages\":\"\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Magnetics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/tmag.2024.3450962\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Magnetics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/tmag.2024.3450962","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}