通过全溶液工艺实现无镉 AIZS 量子点的封端配体工程，从而实现明亮的电致发光发光二极管

IF 4.3 3区材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Advanced Materials Interfaces Pub Date : 2024-09-12 DOI:10.1002/admi.202400385

Yongfeng Liu, Xinyi Wang, Zhaoju Gao, Wenbin Yu, Jinpeng Yang, Feng Xu, Wei Pei, Jia Wang, Min Zhou

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引用次数: 0

摘要

无镉 AgInZnS（AIZS）量子点（QDs）在发光二极管（LEDs）中的应用引起了研究人员的极大兴趣；然而，它们的性能仍然受到绝缘长链配体的限制。在这项研究中，通过用短链 1-辛硫醇（OTT）取代长链 1-十二烷硫醇（DDT），合成了高荧光橙色发光 AIZS QDs，在溶液中实现了高达 80% 的光量子产率，在薄膜中实现了 60% 的光量子产率。将 OTT 与油酸和油胺作为共封端配体结合使用，可使 QDs 在非极性溶剂中实现良好的分散。由此制备的 OTT 封接 AIZS QD 具有更好的薄膜平滑性，并减少了非辐射重组。此外，由氧化铟锡/聚（3,4-亚乙二氧基噻吩）聚苯乙烯磺酸盐/空穴传输层/AIZS QDs/氧化锌电子传输层/铝组成的全溶液处理 QD 发光二极管（QLED）被制造出来。系统评估了 OTT 封装和 AIZS 发光层厚度对器件性能的影响。结果表明，这种 QLED 的亮度和电流效率都得到了提高，分别达到了 515 cd m-2 和 0.4 cd A-1，与使用 DDT 封装 AIZS QD 的器件相比，分别提高了 50% 和 33% 以上。这项研究为开发高亮度 AIZS QLED 提供了一种简便有效的方法。

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Capping Ligand Engineering of Cadmium‐Free AIZS Quantum Dots Toward Bright Electroluminescent Light‐Emitting Diodes by All‐Solution Process

Cadmium‐free AgInZnS (AIZS) quantum dots (QDs) have garnered significant research interest for applications in light‐emitting diodes (LEDs); however, their performance remains limited by insulating long‐chain ligands. In this study, highly fluorescent orange‐emitting AIZS QDs are synthesized by replacing long‐chain 1‐dodecanethiol (DDT) with short‐chain 1‐octanethiol (OTT), achieving photoluminescence quantum yields of up to 80% in solution and 60% in film. The incorporation of OTT in combination with oleic acid and oleylamine as co‐capping ligands enabled excellent dispersion of the QDs in non‐polar solvents. The resulting OTT‐capped AIZS QDs exhibited improved film smoothness and reduced nonradiative recombination. Furthermore, all‐solution‐processed QD light‐emitting diodes (QLEDs) are fabricated comprising indium tin oxide/poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate/hole transporting layer/AIZS QDs/ZnO electron transporting layer/Al. The effects of OTT capping and the thickness of the AIZS emitting layer on device performance are systematically evaluated. As a result, the QLEDs demonstrated enhanced luminance and current efficiency, reaching 515 cd m−2 and 0.4 cd A−1 respectively, representing improvements of over 50% and 33% compared to devices utilizing DDT‐capped AIZS QDs. This study presents a facile and effective approach for developing high‐brightness AIZS QLEDs.

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来源期刊

Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

8.40

自引率

5.60%

发文量

1174

审稿时长

1.3 months

期刊介绍： Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.