无序之下揭示掺杂对有机电子和热电的影响

IF 1.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Andrew Tolton, Zlatan Akšamija
{"title":"无序之下揭示掺杂对有机电子和热电的影响","authors":"Andrew Tolton, Zlatan Akšamija","doi":"10.1557/s43579-024-00628-2","DOIUrl":null,"url":null,"abstract":"<p>Organic materials have found widespread applications but require doping to overcome their intrinsically low carrier concentration. Doping injects free carriers into the polymer, moving the position of the Fermi level, and creates coulombic traps, changing the shape of the electronic density of states (DOS). We develop equations to explicitly map the DOS parameters to the Seebeck vs conductivity relationship. At low carrier concentrations, this relationship is a universal slope <span>\\(-{k}_{B}/q\\)</span>, while at higher carrier concentrations, the slope becomes dependent on the shape of the DOS. We conclude that, at high doping, a heavy-tailed DOS leads to higher thermoelectric power factors.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":19016,"journal":{"name":"MRS Communications","volume":"4 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Beneath the disorder: Unraveling the impacts of doping on organic electronics and thermoelectrics\",\"authors\":\"Andrew Tolton, Zlatan Akšamija\",\"doi\":\"10.1557/s43579-024-00628-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Organic materials have found widespread applications but require doping to overcome their intrinsically low carrier concentration. Doping injects free carriers into the polymer, moving the position of the Fermi level, and creates coulombic traps, changing the shape of the electronic density of states (DOS). We develop equations to explicitly map the DOS parameters to the Seebeck vs conductivity relationship. At low carrier concentrations, this relationship is a universal slope <span>\\\\(-{k}_{B}/q\\\\)</span>, while at higher carrier concentrations, the slope becomes dependent on the shape of the DOS. We conclude that, at high doping, a heavy-tailed DOS leads to higher thermoelectric power factors.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3>\\n\",\"PeriodicalId\":19016,\"journal\":{\"name\":\"MRS Communications\",\"volume\":\"4 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MRS Communications\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43579-024-00628-2\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MRS Communications","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43579-024-00628-2","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

有机材料应用广泛,但需要掺杂才能克服其固有的低载流子浓度问题。掺杂会向聚合物中注入自由载流子,移动费米级的位置,并产生库仑陷阱,改变电子态密度(DOS)的形状。我们开发了一些方程式,将 DOS 参数明确映射到塞贝克与电导率的关系中。在载流子浓度较低时,这种关系是一个普遍的斜率(-{k}_{B}/q/),而在载流子浓度较高时,斜率则取决于 DOS 的形状。我们的结论是,在高掺杂情况下,重尾 DOS 会导致更高的热电功率因数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Beneath the disorder: Unraveling the impacts of doping on organic electronics and thermoelectrics

Beneath the disorder: Unraveling the impacts of doping on organic electronics and thermoelectrics

Organic materials have found widespread applications but require doping to overcome their intrinsically low carrier concentration. Doping injects free carriers into the polymer, moving the position of the Fermi level, and creates coulombic traps, changing the shape of the electronic density of states (DOS). We develop equations to explicitly map the DOS parameters to the Seebeck vs conductivity relationship. At low carrier concentrations, this relationship is a universal slope \(-{k}_{B}/q\), while at higher carrier concentrations, the slope becomes dependent on the shape of the DOS. We conclude that, at high doping, a heavy-tailed DOS leads to higher thermoelectric power factors.

Graphical abstract

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来源期刊
MRS Communications
MRS Communications MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
2.60
自引率
10.50%
发文量
166
审稿时长
>12 weeks
期刊介绍: MRS Communications is a full-color, high-impact journal focused on rapid publication of completed research with broad appeal to the materials community. MRS Communications offers a rapid but rigorous peer-review process and time to publication. Leveraging its access to the far-reaching technical expertise of MRS members and leading materials researchers from around the world, the journal boasts an experienced and highly respected board of principal editors and reviewers.
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