{"title":"压力诱导的四元 Heusler TaAlCuCo 带隙移动和增强的光学特性:DFT 研究","authors":"El Mustapha. Hrida, Soufiane. Bahhar, Abdellah. Tahiri, Mohamed Naji, Mohamed. Idiri","doi":"10.1007/s11082-024-07374-8","DOIUrl":null,"url":null,"abstract":"<div><p>The following work presents a theoretical study on new quaternary Heusler compounds called TaAlCuCo under varying pressures from 0 to 100 GPa. The study comprehensively investigates the material's structural, elastic, mechanical, electronic, optical, and vibrational properties. The results reveal that as the applied pressure increases, the lattice parameters of TaAlCuCo decrease from 6.058465 to 5.476836 Å. Furthermore, the material exhibits desirable characteristics such as ductility, metallic bonding, and stability even under high pressure. Notably, TaAlCuCo demonstrates anisotropic behavior, indicating that its properties vary depending on the measurement direction. The study also observes a widening of the material's bandgap from 0.010 to 0.333 eV with increasing pressure, suggesting a decline in conductivity. Additionally, TaAlCuCo exhibits favorable optical properties, including a high refractive index, absorption, reflectivity, and conductivity, thereby indicating its potential as a UV filter and for use optoelectronic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pressure-induced band gap shift and enhanced optical properties of quaternary Heusler TaAlCuCo: DFT study\",\"authors\":\"El Mustapha. Hrida, Soufiane. Bahhar, Abdellah. Tahiri, Mohamed Naji, Mohamed. Idiri\",\"doi\":\"10.1007/s11082-024-07374-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The following work presents a theoretical study on new quaternary Heusler compounds called TaAlCuCo under varying pressures from 0 to 100 GPa. The study comprehensively investigates the material's structural, elastic, mechanical, electronic, optical, and vibrational properties. The results reveal that as the applied pressure increases, the lattice parameters of TaAlCuCo decrease from 6.058465 to 5.476836 Å. Furthermore, the material exhibits desirable characteristics such as ductility, metallic bonding, and stability even under high pressure. Notably, TaAlCuCo demonstrates anisotropic behavior, indicating that its properties vary depending on the measurement direction. The study also observes a widening of the material's bandgap from 0.010 to 0.333 eV with increasing pressure, suggesting a decline in conductivity. Additionally, TaAlCuCo exhibits favorable optical properties, including a high refractive index, absorption, reflectivity, and conductivity, thereby indicating its potential as a UV filter and for use optoelectronic devices.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07374-8\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07374-8","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Pressure-induced band gap shift and enhanced optical properties of quaternary Heusler TaAlCuCo: DFT study
The following work presents a theoretical study on new quaternary Heusler compounds called TaAlCuCo under varying pressures from 0 to 100 GPa. The study comprehensively investigates the material's structural, elastic, mechanical, electronic, optical, and vibrational properties. The results reveal that as the applied pressure increases, the lattice parameters of TaAlCuCo decrease from 6.058465 to 5.476836 Å. Furthermore, the material exhibits desirable characteristics such as ductility, metallic bonding, and stability even under high pressure. Notably, TaAlCuCo demonstrates anisotropic behavior, indicating that its properties vary depending on the measurement direction. The study also observes a widening of the material's bandgap from 0.010 to 0.333 eV with increasing pressure, suggesting a decline in conductivity. Additionally, TaAlCuCo exhibits favorable optical properties, including a high refractive index, absorption, reflectivity, and conductivity, thereby indicating its potential as a UV filter and for use optoelectronic devices.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.