Taeheon Kwak, Hyeonjin Yang, Junwoo Chung, Minjae Kim, Seongmin Jung, Gisu Park, Felix Sunjoo Kim
{"title":"电解质门控晶体管中溶胶凝胶氧化锌的聚合物诱导表面起皱和亚胺聚合物掺杂作用","authors":"Taeheon Kwak, Hyeonjin Yang, Junwoo Chung, Minjae Kim, Seongmin Jung, Gisu Park, Felix Sunjoo Kim","doi":"10.1007/s13233-024-00315-0","DOIUrl":null,"url":null,"abstract":"<p>We report that thin-film morphology of sol–gel zinc oxide (ZnO) and their n-doping characteristics can be controlled using polymers, enabling high-performance n-type electrolyte-gated transistors (EGTs). The wrinkled surface of ZnO films was induced by dissolving an insulating polymer, for example, poly(4-vinyl phenol) (PVPh) and poly(2-hydroxyethyl methacrylate) (PHEMA), into the ZnO precursor solutions, followed by drying at 210 °C. The roughness peaked when the polymer composition was 2.5 wt%. The wavelength (λ) of the wrinkling structure was varied depending on the added polymer (0.49 μm for PVPh and 0.74 μm for PHEMA). For n-doping of the ZnO films, polyethylenimine (PEI) was deposited on the composite films, followed by high-temperature annealing at 500 °C. The constituent polymers (PVPh/PHEMA and PEI) were found decomposed after the heat treatment. The resulting n-doped ZnO films showed excellent electrical characteristics when used as a channel layer in EGTs based on a solid-state ion-gel. The device has a high electron mobility of 63.7 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> when ZnO channel was made with 1.0% of PVPh in the precursor.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3><p>Thin films of sol–gel precursors of ZnO mixed with an insulating polymer form wrinkled surface during drying and become more susceptible to n-doping from a nitrogen-rich polymer by thermal annealing, enabling the mobility enhancement of ZnO in electrolyte-gated transistors.</p>\n","PeriodicalId":688,"journal":{"name":"Macromolecular Research","volume":"63 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polymer-induced surface wrinkling and imine polymer-based doping of sol–gel zinc oxide in electrolyte-gated transistors\",\"authors\":\"Taeheon Kwak, Hyeonjin Yang, Junwoo Chung, Minjae Kim, Seongmin Jung, Gisu Park, Felix Sunjoo Kim\",\"doi\":\"10.1007/s13233-024-00315-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>We report that thin-film morphology of sol–gel zinc oxide (ZnO) and their n-doping characteristics can be controlled using polymers, enabling high-performance n-type electrolyte-gated transistors (EGTs). The wrinkled surface of ZnO films was induced by dissolving an insulating polymer, for example, poly(4-vinyl phenol) (PVPh) and poly(2-hydroxyethyl methacrylate) (PHEMA), into the ZnO precursor solutions, followed by drying at 210 °C. The roughness peaked when the polymer composition was 2.5 wt%. The wavelength (λ) of the wrinkling structure was varied depending on the added polymer (0.49 μm for PVPh and 0.74 μm for PHEMA). For n-doping of the ZnO films, polyethylenimine (PEI) was deposited on the composite films, followed by high-temperature annealing at 500 °C. The constituent polymers (PVPh/PHEMA and PEI) were found decomposed after the heat treatment. The resulting n-doped ZnO films showed excellent electrical characteristics when used as a channel layer in EGTs based on a solid-state ion-gel. The device has a high electron mobility of 63.7 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> when ZnO channel was made with 1.0% of PVPh in the precursor.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3><p>Thin films of sol–gel precursors of ZnO mixed with an insulating polymer form wrinkled surface during drying and become more susceptible to n-doping from a nitrogen-rich polymer by thermal annealing, enabling the mobility enhancement of ZnO in electrolyte-gated transistors.</p>\\n\",\"PeriodicalId\":688,\"journal\":{\"name\":\"Macromolecular Research\",\"volume\":\"63 1\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Macromolecular Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s13233-024-00315-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"POLYMER SCIENCE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Macromolecular Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s13233-024-00315-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}
引用次数: 0
摘要
我们报告了利用聚合物控制溶胶凝胶氧化锌(ZnO)薄膜形态及其 n 掺杂特性的方法,从而实现了高性能 n 型电解质门控晶体管(EGT)。将绝缘聚合物(如聚(4-乙烯基苯酚)(PVPh)和聚(2-羟乙基甲基丙烯酸酯)(PHEMA))溶解到氧化锌前驱体溶液中,然后在 210 ℃ 下干燥,可诱导氧化锌薄膜表面起皱。当聚合物成分为 2.5 wt% 时,粗糙度达到峰值。皱褶结构的波长(λ)随添加聚合物的不同而变化(PVPh 为 0.49 μm,PHEMA 为 0.74 μm)。为了对氧化锌薄膜进行 n 掺杂,在复合薄膜上沉积了聚乙烯亚胺(PEI),然后在 500 °C 高温退火。热处理后发现组成聚合物(PVPh/PHEMA 和 PEI)发生了分解。在基于固态离子凝胶的 EGT 中用作通道层时,所得到的 n 掺杂氧化锌薄膜显示出了优异的电气特性。该器件的电子迁移率高达 63.7 cm2 V-1 s-1。图文并茂的 ZnO 溶胶凝胶前驱体与绝缘聚合物混合后形成的薄膜在干燥过程中表面起皱,通过热退火更易受到富氮聚合物的 n 掺杂,从而提高了 ZnO 在电解质门控晶体管中的迁移率。
Polymer-induced surface wrinkling and imine polymer-based doping of sol–gel zinc oxide in electrolyte-gated transistors
We report that thin-film morphology of sol–gel zinc oxide (ZnO) and their n-doping characteristics can be controlled using polymers, enabling high-performance n-type electrolyte-gated transistors (EGTs). The wrinkled surface of ZnO films was induced by dissolving an insulating polymer, for example, poly(4-vinyl phenol) (PVPh) and poly(2-hydroxyethyl methacrylate) (PHEMA), into the ZnO precursor solutions, followed by drying at 210 °C. The roughness peaked when the polymer composition was 2.5 wt%. The wavelength (λ) of the wrinkling structure was varied depending on the added polymer (0.49 μm for PVPh and 0.74 μm for PHEMA). For n-doping of the ZnO films, polyethylenimine (PEI) was deposited on the composite films, followed by high-temperature annealing at 500 °C. The constituent polymers (PVPh/PHEMA and PEI) were found decomposed after the heat treatment. The resulting n-doped ZnO films showed excellent electrical characteristics when used as a channel layer in EGTs based on a solid-state ion-gel. The device has a high electron mobility of 63.7 cm2 V−1 s−1 when ZnO channel was made with 1.0% of PVPh in the precursor.
Graphical abstract
Thin films of sol–gel precursors of ZnO mixed with an insulating polymer form wrinkled surface during drying and become more susceptible to n-doping from a nitrogen-rich polymer by thermal annealing, enabling the mobility enhancement of ZnO in electrolyte-gated transistors.
期刊介绍:
Original research on all aspects of polymer science, engineering and technology, including nanotechnology
Presents original research articles on all aspects of polymer science, engineering and technology
Coverage extends to such topics as nanotechnology, biotechnology and information technology
The English-language journal of the Polymer Society of Korea
Macromolecular Research is a scientific journal published monthly by the Polymer Society of Korea. Macromolecular Research publishes original researches on all aspects of polymer science, engineering, and technology as well as new emerging technologies using polymeric materials including nanotechnology, biotechnology, and information technology in forms of Articles, Communications, Notes, Reviews, and Feature articles.