Shangda Li;Shang Liu;Hryhorii Stanchu;Grey Abernathy;Baohua Li;Shui-Qing Yu;Xiaoxin Wang;Jifeng Liu
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Ion Implantation Damage Recovery in GeSn Thin Films
Germanium-tin (GeSn) alloys are promising materials for infrared photonics due to their tunable direct bandgap and compatibility with silicon technology. However, implantation doping of GeSn layers to achieve more sophisticated doping profiles faces challenges, particularly in restoring crystallinity after ion implantation. In this work, we investigate the recrystallization of ion-implanted GeSn thin films through rapid thermal annealing (RTA) and laser annealing. We propose a model for Sn diffusion pathways that lead to surface segregation based on distinct surface segregation patterns in GeSn layers with varying degrees of amorphization. Our results demonstrate that RTA at 400 °C effectively restores the crystallinity for GeSn thin films with up to 10.7 at.% Sn composition, despite a small amount of Sn surface segregation, while 532 nm wavelength CW laser annealing at a threshold power density above 52 kW/cm
2
also achieves recrystallization without Sn segregation. These findings contribute to understanding Sn segregation mechanisms and optimizing recrystallization conditions for GeSn after implantation, advancing its potential for infrared photonics applications.
期刊介绍:
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.