High throughput observation of latent images on resist using laser-based photoemission electron microscopy

The rapid evolution of lithography technology necessitates faster pattern inspection methods. Here, we propose the use of laser-based photoemission electron microscopy (laser-PEEM) for high-throughput observation of latent images on an electron beam resist. We revealed that this technique can visualize latent images as chemical contrasts, and estimated the throughput millions of times higher than those of an atomic force microscope. Moreover, we estimated that throughput tens of thousands of times higher than a single-beam scanning electron microscope is achievable for post-developed resist patterns. This breakthrough highlights the potential of laser-PEEM to revolutionize a high-throughput lithographic pattern inspection in semiconductor manufacturing.