用于太阳能电池应用的无铅卤化物 K2SnX6(X = Cl、Br、I)双包晶的系统分析

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Huma Habib, Mazhar Haleem, Muhammad Rashid, Awais Ali, Arshad Saleem Bhatti, Zulqurnain Ali, Mujtaba Hussain
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引用次数: 0

摘要

由于具有独特的光电特性,含铅的过氧化物最近受到了广泛的关注。因此,它们被认为是非常适合太阳能和太阳能收集应用的材料。然而,过氧化物在空气和湿气中的不稳定性以及铅的毒性限制了它们在开发实用设备中的应用。本研究对立方无铅双包晶石 K2SnX6(X = Cl、Br、I)的基本结构、电子、光学和热电特性进行了详细的第一原理研究。由于所有结构都符合玻恩标准,因此具有良好的机械稳定性。它们的泊松比(v)和普氏比(B0/G)分别超过了 0.26 和 1.75 的临界值,显示了它们的延展性。利用广义梯度近似法(GGA)对这些结构的带隙进行了计算,结果表明,除了具有金属特性的 K2SnI6 外,这些包晶均表现出直接带隙。此外,还通过添加修正的贝克-约翰逊势(TB-mBJ)计算了带隙。此外,K2SnBr6 和 K2SnI6 的计算折射率显示了其在紫外区的优异发光特性。K2SnCl6 和 K2SnBr6 的优点系数(ZT)接近 1,而 K2SnI6 在室温下的优点系数约为 0.568。这项研究的结论充分证明,这些包晶结构 K2SnX6(X = Cl、Br、I)在即将到来的能源转换和基于太阳能电池的技术中显示出巨大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Systematic analysis of lead-free halide K2SnX6 (X = Cl, Br, I) double perovskites for solar cell applications

Systematic analysis of lead-free halide K2SnX6 (X = Cl, Br, I) double perovskites for solar cell applications

Perovskites possessing lead have gained immense consideration recently owing to their unique optoelectronic properties. Thus, they are considered highly suitable materials for solar power and harvesting applications. However, the instability of perovskites in air and moisture, along with the toxicity of lead, has limited their use in developing practical devices. In this work, detailed first-principles research was carried out to discover the basic structural, electronic, optical, and thermoelectric properties of cubic lead-free double perovskites K2SnX6 (X = Cl, Br, I). All structures exhibited good mechanical stability as they satisfied the Born criteria. The values of their Poisson’s (v) and Pugh’s ratios (B0/G) exceeded the critical numbers of 0.26 and 1.75, respectively, revealing their ductile nature. The bandgap calculations for the structures were accomplished using the generalized gradient approximation (GGA), which revealed that these perovskites exhibited direct band gaps except K2SnI6, having metallic characteristics. The bandgaps were also calculated by adding the modified Becke–Johnson potential (TB-mBJ). Moreover, computed refractive indices for K2SnBr6 and K2SnI6 revealed excellent luminescent properties in the UV region. The figure of merit (ZT) for K2SnCl6 and K2SnBr6 approached 1, whereas its value was around 0.568 for K2SnI6 at room temperature. The conclusions of this study provide sufficient evidence that these perovskite structures K2SnX6 (X = Cl, Br, I) show immense potential for upcoming energy conversion and solar cell-based technologies.

Graphical abstract

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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