Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad
{"title":"静电掺杂硅烯和石墨烯纳米带 FET 的模拟研究","authors":"Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad","doi":"10.1007/s10825-024-02224-y","DOIUrl":null,"url":null,"abstract":"<div><p>This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio to 3.8 × 10<sup>5</sup> in SiNR-FET compared to 3.9 × 10<sup>3</sup> in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g<sub>m</sub>) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1315 - 1324"},"PeriodicalIF":2.2000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A simulation study of electrostatically doped silicene and graphene nanoribbon FETs\",\"authors\":\"Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad\",\"doi\":\"10.1007/s10825-024-02224-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio to 3.8 × 10<sup>5</sup> in SiNR-FET compared to 3.9 × 10<sup>3</sup> in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g<sub>m</sub>) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 6\",\"pages\":\"1315 - 1324\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02224-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02224-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A simulation study of electrostatically doped silicene and graphene nanoribbon FETs
This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the ION/IOFF ratio to 3.8 × 105 in SiNR-FET compared to 3.9 × 103 in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (gm) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
