具有可配置开关网络的 N/PBTI 隔离式 BTI 监视器以及针对内存外围工艺变化的校准功能

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shin-Hyun Jeong;Yong-Un Jeong;Suhwan Kim
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引用次数: 0

摘要

本简介介绍一种片上偏置温度不稳定性(BTI)监控器,用于准确检测 DRAM 外围负 BTI(NBTI)和正 BTI(PBTI)引起的性能下降。利用可配置的上拉和下拉开关网络,拟议的 BTI 监测器能够隔离测量 NBTI 和 PBTI。双延迟线拓扑结构还能确保快速测量,最大限度地减少不必要的 BTI 恢复,因为 BTI 恢复会降低测量精度。此外,为了进一步提高测量精度,还提出了一种针对制程变化的校准方案,即利用器件的体偏压来模拟 BTI 引起的应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An N/PBTI-Isolated BTI Monitor With a Configurable Switching Network and Calibration for Process Variation in Memory Periphery
This brief presents an on-chip bias temperature instability (BTI) monitor to accurately detect performance degradation caused by negative BTI (NBTI) and positive BTI (PBTI) in DRAM periphery. The proposed BTI monitor is capable of isolated measurement of both NBTI and PBTI using a configurable pull-up and pull-down switching network. The dual-delay line topology also ensures fast measurement to minimize unwanted BTI recovery, which reduces measurement accuracy. In addition, a calibration scheme for process variation is proposed using body biasing of devices that mimics BTI-induced stress to further enhance measurement accuracy.
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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