用于高速 SRAM 的电源升压型电压检测放大器 (SBVSA) 快达 45

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Rachit Sharma;Anuj Grover;Ajay Shroti;Shouri Chatterjee
{"title":"用于高速 SRAM 的电源升压型电压检测放大器 (SBVSA) 快达 45","authors":"Rachit Sharma;Anuj Grover;Ajay Shroti;Shouri Chatterjee","doi":"10.1109/TCSII.2024.3443594","DOIUrl":null,"url":null,"abstract":"The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at \n<inline-formula> <tex-math>$5\\sigma $ </tex-math></inline-formula>\n than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"71 11","pages":"4683-4687"},"PeriodicalIF":4.0000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Up to 45% Faster Supply Boosted Voltage Sense Amplifier (SBVSA) for High-Speed SRAMs\",\"authors\":\"Rachit Sharma;Anuj Grover;Ajay Shroti;Shouri Chatterjee\",\"doi\":\"10.1109/TCSII.2024.3443594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at \\n<inline-formula> <tex-math>$5\\\\sigma $ </tex-math></inline-formula>\\n than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"71 11\",\"pages\":\"4683-4687\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10636781/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10636781/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

感应放大器(SA)的性能对高速 SRAM 至关重要。在低电压下,大偏移和慢分辨感应放大器会成为 SRAM 性能的瓶颈,因此,人们非常重视设计速度更快的感应放大器,但往往以牺牲面积为代价。在本简介中,我们提出了一种容差电源升压电压检测放大器(SBVSA),在 22nm CMOS 技术中,它比传统电压检测放大器(CVSA)在 5 美元/sigma $ 时的速度快 45%。实现这一增益时,SRAM 实例的面积开销不到 1%,而在 22nm CMOS 技术中,实例的读取性能最多可提高 9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Up to 45% Faster Supply Boosted Voltage Sense Amplifier (SBVSA) for High-Speed SRAMs
The performance of Sense Amplifiers (SAs) is critical to high-speed SRAMs. Large-offset and slow-resolving SAs can create a bottleneck in the SRAM performance at low voltages because of which a lot of emphasis is laid on designing faster SAs, often at the cost of area. In this brief, we propose a variation-tolerant Supply Boosted Voltage Sense Amplifier (SBVSA) that is up to 45% faster at $5\sigma $ than a Conventional Voltage Sense Amplifier (CVSA) in 22nm CMOS technology. This gain is achieved with an area overhead of less than 1% in SRAM instances while improving the read performance of the instances by up to 9% in 22nm CMOS.
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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