采用分段式通过晶体管的低静态电流快速瞬态 LDO 稳压器

IF 4 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-09-12 DOI:10.1109/TCSII.2024.3458975

Yani Li;Zonghui Li;Libo Qian;Xiudeng Wang;Zhangming Zhu

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引用次数: 0

摘要

本文提出了一种低静态电流快速瞬态低差稳压器（LDO）。LDO中的通场效应晶体管（FET）被分割成三个部分，以应对不同的负载。在空载模式下，最小尺寸的通型晶体管由误差放大器（EA）直接驱动，具有低静态电流。在轻负载和重载模式下，中通管和最大通管分别被不同强度的缓冲器接通，以获得快速的瞬态响应。所提出的LDO在$0.18~\mu $ m的BCD工艺中实现，活性面积为0.0875 mm2。LDO在空载状态下的静态电流为25 nA，输入电压范围为1.5 V-5.5 V，输出电压范围为1.2 V-5 V。负载电容为$1~\mu $ F，负载电流在100 ns内从0 mA切换到200 mA时，测量到的瞬态输出电压为28 mV。回收时间约为$1~\mu $ s。与已报道的同类产品相比，所提出的LDO具有优异的性能值（FOM）。

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A Low Quiescent Current Fast Transient LDO Regulator With Segmented Pass Transistors

This brief proposes a low quiescent current fast transient low-dropout regulator (LDO). The pass field-effect transistor (FET) in the LDO is segmented into three sections to cope with different loads. Under no-load mode, the smallest-sized pass transistor is directly driven by the error amplifier (EA) for low quiescent current. At light- and heavy- load modes, the medium and largest sized pass FETs are respectively switched on by different strength buffers for fast transient response. The proposed LDO is implemented in a

$0.18~\mu $

m BCD process with an active area of 0.0875 mm2. The LDO consumes a quiescent current of 25 nA at no-load condition, with an input voltage range of 1.5 V-5.5 V and an output voltage range of 1.2 V-5 V. The measured transient output voltage is 28 mV when load current is switched from 0 mA to 200 mA in 100 ns with

$1~\mu $

F load capacitance. The recovery time is about

$1~\mu $

s. Compared to reported counterparts, the proposed LDO shows an excellent figure-of-merit (FOM).

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.