{"title":"1800 °C 大气退火对金刚石中 SiV、GeV 和 SnV 生成的退火时间依赖性","authors":"Tomoya Baba, Masatomi Iizawa, Kouta Takenaka, Kosuke Kimura, Airi Kawasaki, Takashi Taniguchi, Masashi Miyakawa, Hiroyuki Okazaki, Osamu Hanaizumi, Shinobu Onoda","doi":"10.1002/pssa.202400303","DOIUrl":null,"url":null,"abstract":"The creation of SiV<jats:sup>−</jats:sup>, GeV<jats:sup>−</jats:sup>, and SnV<jats:sup>−</jats:sup> are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"135 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Annealing Time Dependence on Creation of SiV, GeV, and SnV in Diamond by Atmospheric Annealing at 1800 °C\",\"authors\":\"Tomoya Baba, Masatomi Iizawa, Kouta Takenaka, Kosuke Kimura, Airi Kawasaki, Takashi Taniguchi, Masashi Miyakawa, Hiroyuki Okazaki, Osamu Hanaizumi, Shinobu Onoda\",\"doi\":\"10.1002/pssa.202400303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The creation of SiV<jats:sup>−</jats:sup>, GeV<jats:sup>−</jats:sup>, and SnV<jats:sup>−</jats:sup> are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":\"135 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400303\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400303","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
在氩气流中进行的大气退火可产生 SiV-、GeV- 和 SnV-。与气体无法流动的高压退火相比,惰性气体流动的大气退火不仅能减少样品表面的退化,还具有降低设备成本和减少制备时间的优势。事实证明,过长的退火时间会减少中心的生成量。能最大限度形成中心的最佳退火时间取决于金刚石样品的类型和植入的离子。此外,受 IV-V 族中心分裂空位结构的启发,在 600 °C 下进行大气预退火以增加二空位的数量,然后在 1800 °C 下退火 1 分钟。较短的高温退火时间有望从质量上减少金刚石样品的应力和结晶度劣化。
Annealing Time Dependence on Creation of SiV, GeV, and SnV in Diamond by Atmospheric Annealing at 1800 °C
The creation of SiV−, GeV−, and SnV− are presented by the atmospheric annealing in the argon flow. Compared to high‐pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split‐vacancy structure of the group IV–V centers, atmospheric pre‐annealing at 600 °C to increase the amount of di‐vacancy is demonstrated, followed by annealing at 1800 °C for 1 min. A shorter duration of high‐temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.