{"title":"共振偶极-偶极相互作用:在二维 MoS2 中放大较弱 PL 发射的方案","authors":"Km Neeshu, Himanshu Tyagi, Arneet Kaur, Manpreet Kaur, Jyoti Saini, Mamta Raturi, Akash Kumar Maharana, Tapaswini Dash, Abir De Sarkar, Kiran Shankar Hazra","doi":"10.1021/acsaelm.4c00972","DOIUrl":null,"url":null,"abstract":"The decade old challenge of achieving excitons at room temperature in conventional bulk semiconductors, limiting their applications in photonic communication, has been overcome by the discovery of noncryogenic stable excitonic emission in 2D transition-metal dichalcogenides. The pioneering detection of stable excitonic emission under ambient conditions in the 2D family was achieved with MoS<sub>2</sub>, featuring characteristic twin-peaked photoluminescence spectra characterized by a pronounced A exciton peak, alongside a weaker B exciton peak. The accessibility and applicability of weaker exciton emissions are very limited as compared to prominent exciton emissions, which restricts the vast possibility of usage of weaker excitonic emissions spread across a broad spectral range. In this article, we have demonstrated a simple approach to selectively enhance weaker exciton emission through resonant dipole–dipole interaction. Our approach involves the utilization of a hybrid heterojunction, where the spectral overlap of excitonic emission between two materials leads to the dipole–dipole resonance effect and subsequently increases emission intensity. We have targeted the inherently low-intensity B exciton emission feature of MoS<sub>2</sub> and coupled it with cuprous oxide (Cu<sub>2</sub>O) thin films, leveraging the strong spectral overlap between the intrinsic excitonic emission bands of Cu<sub>2</sub>O and the B exciton. Furthermore, we employed finite element analysis to investigate the impact of the extinction response on the B exciton enhancement. Our approach provides versatility in selectively augmenting weaker exciton emission by leveraging the exploitation of exciton resonance between two materials, thereby amplifying emission intensity at the targeted wavelength.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resonant Dipole–Dipole Interaction: A Protocol to Amplify Weaker PL Emission in 2D MoS2\",\"authors\":\"Km Neeshu, Himanshu Tyagi, Arneet Kaur, Manpreet Kaur, Jyoti Saini, Mamta Raturi, Akash Kumar Maharana, Tapaswini Dash, Abir De Sarkar, Kiran Shankar Hazra\",\"doi\":\"10.1021/acsaelm.4c00972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The decade old challenge of achieving excitons at room temperature in conventional bulk semiconductors, limiting their applications in photonic communication, has been overcome by the discovery of noncryogenic stable excitonic emission in 2D transition-metal dichalcogenides. The pioneering detection of stable excitonic emission under ambient conditions in the 2D family was achieved with MoS<sub>2</sub>, featuring characteristic twin-peaked photoluminescence spectra characterized by a pronounced A exciton peak, alongside a weaker B exciton peak. The accessibility and applicability of weaker exciton emissions are very limited as compared to prominent exciton emissions, which restricts the vast possibility of usage of weaker excitonic emissions spread across a broad spectral range. In this article, we have demonstrated a simple approach to selectively enhance weaker exciton emission through resonant dipole–dipole interaction. Our approach involves the utilization of a hybrid heterojunction, where the spectral overlap of excitonic emission between two materials leads to the dipole–dipole resonance effect and subsequently increases emission intensity. We have targeted the inherently low-intensity B exciton emission feature of MoS<sub>2</sub> and coupled it with cuprous oxide (Cu<sub>2</sub>O) thin films, leveraging the strong spectral overlap between the intrinsic excitonic emission bands of Cu<sub>2</sub>O and the B exciton. Furthermore, we employed finite element analysis to investigate the impact of the extinction response on the B exciton enhancement. Our approach provides versatility in selectively augmenting weaker exciton emission by leveraging the exploitation of exciton resonance between two materials, thereby amplifying emission intensity at the targeted wavelength.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsaelm.4c00972\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaelm.4c00972","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
在二维过渡金属二卤化物中发现了非致冷的稳定激子发射,从而克服了传统块体半导体在室温下实现激子发射这一限制其光子通信应用的十年难题。二维过渡金属二碲化物(MoS2)率先在环境条件下实现了稳定的激子发射,其特征性的双峰光致发光光谱具有明显的 A 激子峰和较弱的 B 激子峰。与突出的激子发射相比,较弱的激子发射的可获取性和适用性非常有限,这限制了在宽光谱范围内使用较弱激子发射的可能性。在本文中,我们展示了一种通过共振偶极-偶极相互作用选择性增强较弱激子发射的简单方法。我们的方法涉及利用混合异质结,其中两种材料之间的激子发射光谱重叠会导致偶极-偶极共振效应,从而提高发射强度。我们瞄准了 MoS2 固有的低强度 B 激子发射特性,并将其与氧化亚铜(Cu2O)薄膜耦合,充分利用了 Cu2O 固有激子发射带与 B 激子之间的强光谱重叠。此外,我们还采用有限元分析来研究消光响应对 B 激子增强的影响。我们的方法通过利用两种材料之间的激子共振,提供了选择性增强较弱激子发射的多功能性,从而放大了目标波长的发射强度。
Resonant Dipole–Dipole Interaction: A Protocol to Amplify Weaker PL Emission in 2D MoS2
The decade old challenge of achieving excitons at room temperature in conventional bulk semiconductors, limiting their applications in photonic communication, has been overcome by the discovery of noncryogenic stable excitonic emission in 2D transition-metal dichalcogenides. The pioneering detection of stable excitonic emission under ambient conditions in the 2D family was achieved with MoS2, featuring characteristic twin-peaked photoluminescence spectra characterized by a pronounced A exciton peak, alongside a weaker B exciton peak. The accessibility and applicability of weaker exciton emissions are very limited as compared to prominent exciton emissions, which restricts the vast possibility of usage of weaker excitonic emissions spread across a broad spectral range. In this article, we have demonstrated a simple approach to selectively enhance weaker exciton emission through resonant dipole–dipole interaction. Our approach involves the utilization of a hybrid heterojunction, where the spectral overlap of excitonic emission between two materials leads to the dipole–dipole resonance effect and subsequently increases emission intensity. We have targeted the inherently low-intensity B exciton emission feature of MoS2 and coupled it with cuprous oxide (Cu2O) thin films, leveraging the strong spectral overlap between the intrinsic excitonic emission bands of Cu2O and the B exciton. Furthermore, we employed finite element analysis to investigate the impact of the extinction response on the B exciton enhancement. Our approach provides versatility in selectively augmenting weaker exciton emission by leveraging the exploitation of exciton resonance between two materials, thereby amplifying emission intensity at the targeted wavelength.