准一维 TiS3 半导体光电导性的对数弛豫

IF 1.4 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
I. G. Gorlova, S. G. Zybtsev, V. Ya. Pokrovskii, S. A. Nikonov, S. V. Zaitsev-Zotov, A. N. Titov
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引用次数: 0

摘要

研究了波长范围为 λ = 405-940 nm 的矩形光脉冲照射下 TiS3 单晶体光电导的瞬态过程。结果表明,在温度为 78 至 180 K 的条件下,关灯后的光电导衰减在 10-3 至 102 秒(即时间变化 5 个数量级)的范围内用对数定律描述。这意味着弛豫过程的时间至少从几十微秒到几十分钟不等。研究表明,弛豫过程基本上是连续进行的:当电导率接近平衡值时,重组势垒增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Logarithmic Relaxation of the Photoconductivity of a Quasi-One-Dimensional TiS3 Semiconductor

Logarithmic Relaxation of the Photoconductivity of a Quasi-One-Dimensional TiS3 Semiconductor

Logarithmic Relaxation of the Photoconductivity of a Quasi-One-Dimensional TiS3 Semiconductor

Transient processes in the photoconductivity of TiS3 single crystals exposed to rectangular light pulses in the wavelength range of λ = 405–940 nm are investigated. It is established that the decay in the photoconductivity after switching the light off at temperatures from 78 to 180 K is described by a logarithmic law in the range from 10–3 to 102 s (i.e., when time changes by five orders of magnitude). This means that the relaxation process is characterized by times ranging, at least, from several tens of microseconds to several tens of minutes. It is shown that the relaxation is basically successive: the recombination barrier increases while the conductivity approaches the equilibrium value.

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来源期刊
JETP Letters
JETP Letters 物理-物理:综合
CiteScore
2.40
自引率
30.80%
发文量
164
审稿时长
3-6 weeks
期刊介绍: All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.
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