用于无标记生物分子检测的基于双腔源口袋的电荷等离子体隧道场效应晶体管的建模和灵敏度估计

IF 1.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shwetapadma Panda, Sidhartha Dash
{"title":"用于无标记生物分子检测的基于双腔源口袋的电荷等离子体隧道场效应晶体管的建模和灵敏度估计","authors":"Shwetapadma Panda, Sidhartha Dash","doi":"10.1149/2162-8777/ad6a89","DOIUrl":null,"url":null,"abstract":"A dual-source cavity charge plasma tunneling FET (DSC-SP-CPTFET) with SiGe Pocket is proposed, and its effectiveness as a biological sensor for label-free detection is explored. The fabrication complexity and cost have been reduced by using the charge-plasma concept. For improved sensing, an etched nanocavity is added to the upper and lower of the source metal section. The high-<italic toggle=\"yes\">k</italic> (HfO<sub>2</sub>) gate oxide and minimal energy gap (Si<sub>0.6</sub>Ge<sub>0.4</sub>) alloy with a 40% mole fraction improve the current sensitivity by enhancing the drain current gradient. The sensitivity of the suggested biological sensor is assessed here for several neutral biological molecules, such as Gelatin, Keratin, Biotin, and 3-Aminopropyl-Triethoxysilane (APTES). Deoxyribonucleic acid (DNA), a charged biological molecule, is also considered with varying positive and negative charge densities. The suggested biological sensor shows a (S<sub>IDS</sub>)<sub>max</sub> of 2.21 × 10<sup>10</sup> and a S<sub>ratio</sub> of 3.11 × 10<sup>9</sup> for biological molecules with higher dielectric constant at room temperature. Different electrostatic performances are estimated in the ON state, including energy band, electron (e<sup>-</sup>) BTBT rate, electrical field, and I<sub>DS</sub>-V<sub>GS</sub> characteristics. In addition, the proposed biological sensor provides a much superior drain current sensitivity (S<sub>IDS</sub>), current ratio sensitivity (S<sub>ratio</sub>), and average SS sensitivity (S<sub>SS</sub>) performance in the presence of both charged and neutral biological molecules.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling and Sensitivity Estimation of a Dual Cavity Source Pocket-Based Charge Plasma Tunneling FET for Label-Free Biological Molecule Detection\",\"authors\":\"Shwetapadma Panda, Sidhartha Dash\",\"doi\":\"10.1149/2162-8777/ad6a89\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual-source cavity charge plasma tunneling FET (DSC-SP-CPTFET) with SiGe Pocket is proposed, and its effectiveness as a biological sensor for label-free detection is explored. The fabrication complexity and cost have been reduced by using the charge-plasma concept. For improved sensing, an etched nanocavity is added to the upper and lower of the source metal section. The high-<italic toggle=\\\"yes\\\">k</italic> (HfO<sub>2</sub>) gate oxide and minimal energy gap (Si<sub>0.6</sub>Ge<sub>0.4</sub>) alloy with a 40% mole fraction improve the current sensitivity by enhancing the drain current gradient. The sensitivity of the suggested biological sensor is assessed here for several neutral biological molecules, such as Gelatin, Keratin, Biotin, and 3-Aminopropyl-Triethoxysilane (APTES). Deoxyribonucleic acid (DNA), a charged biological molecule, is also considered with varying positive and negative charge densities. The suggested biological sensor shows a (S<sub>IDS</sub>)<sub>max</sub> of 2.21 × 10<sup>10</sup> and a S<sub>ratio</sub> of 3.11 × 10<sup>9</sup> for biological molecules with higher dielectric constant at room temperature. Different electrostatic performances are estimated in the ON state, including energy band, electron (e<sup>-</sup>) BTBT rate, electrical field, and I<sub>DS</sub>-V<sub>GS</sub> characteristics. In addition, the proposed biological sensor provides a much superior drain current sensitivity (S<sub>IDS</sub>), current ratio sensitivity (S<sub>ratio</sub>), and average SS sensitivity (S<sub>SS</sub>) performance in the presence of both charged and neutral biological molecules.\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":\"14 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad6a89\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad6a89","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种采用硅锗衬底的双源腔电荷等离子体隧道场效应晶体管(DSC-SP-CPTFET),并探讨了它作为无标记检测生物传感器的有效性。利用电荷等离子体概念降低了制造复杂性和成本。为了改进传感,在源金属部分的上下两端添加了蚀刻纳米腔。高 K(HfO2)栅极氧化物和分子分数为 40% 的最小能隙(Si0.6Ge0.4)合金通过增强漏极电流梯度提高了电流灵敏度。本文评估了所建议的生物传感器对几种中性生物分子(如明胶、角蛋白、生物素和 3-氨基丙基三乙氧基硅烷 (APTES))的灵敏度。此外,还考虑了带电生物分子脱氧核糖核酸(DNA)的不同正负电荷密度。对于室温下介电常数较高的生物分子,所建议的生物传感器的(SIDS)最大值为 2.21 × 1010,Sratio 为 3.11 × 109。估计了导通状态下的不同静电性能,包括能带、电子(e-)BTBT 率、电场和 IDS-VGS 特性。此外,在带电和中性生物分子存在的情况下,所提出的生物传感器都能提供出色的漏极电流灵敏度(SIDS)、电流比灵敏度(Sratio)和平均 SS 灵敏度(SSS)性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and Sensitivity Estimation of a Dual Cavity Source Pocket-Based Charge Plasma Tunneling FET for Label-Free Biological Molecule Detection
A dual-source cavity charge plasma tunneling FET (DSC-SP-CPTFET) with SiGe Pocket is proposed, and its effectiveness as a biological sensor for label-free detection is explored. The fabrication complexity and cost have been reduced by using the charge-plasma concept. For improved sensing, an etched nanocavity is added to the upper and lower of the source metal section. The high-k (HfO2) gate oxide and minimal energy gap (Si0.6Ge0.4) alloy with a 40% mole fraction improve the current sensitivity by enhancing the drain current gradient. The sensitivity of the suggested biological sensor is assessed here for several neutral biological molecules, such as Gelatin, Keratin, Biotin, and 3-Aminopropyl-Triethoxysilane (APTES). Deoxyribonucleic acid (DNA), a charged biological molecule, is also considered with varying positive and negative charge densities. The suggested biological sensor shows a (SIDS)max of 2.21 × 1010 and a Sratio of 3.11 × 109 for biological molecules with higher dielectric constant at room temperature. Different electrostatic performances are estimated in the ON state, including energy band, electron (e-) BTBT rate, electrical field, and IDS-VGS characteristics. In addition, the proposed biological sensor provides a much superior drain current sensitivity (SIDS), current ratio sensitivity (Sratio), and average SS sensitivity (SSS) performance in the presence of both charged and neutral biological molecules.
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来源期刊
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
4.50
自引率
13.60%
发文量
455
期刊介绍: The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.
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