电磁理论的实现:改进 F 类功率放大器的分析和设计

IF 1.8 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Syed Enamur Rahaman, Santanu Dwari, Mirnal Kanti Mandal
{"title":"电磁理论的实现:改进 F 类功率放大器的分析和设计","authors":"Syed Enamur Rahaman, Santanu Dwari, Mirnal Kanti Mandal","doi":"10.1002/cta.4268","DOIUrl":null,"url":null,"abstract":"The general electromagnetic (EM) theory has not yet been applied to the analysis of Class F (CF) power amplifier (PA). In this paper, an alternative approach for CF PA is presented based on the EM theory. Theoretical analysis shows that the CF PA can be divided into two broad categories, forward voltage gain, and reflected voltage gain PA. The existing CF PA belongs to the reflected voltage gain PA. Even though both the CF PAs have the same voltage gain, the PA with forward voltage gain provides higher fundamental power <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> and drain efficiency <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> than that CF PA with reflected voltage gain and Class B PA. This important conclusion is obtained as a result of this analysis, which cannot be explained by available theory in the literature. The theoretical analysis is validated at 2.2 GHz by fabrication and measurements. According to the results, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@B</jats:italic></jats:sub> = 31.8 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@B</jats:italic></jats:sub> = 53.27% in Class B PA. In CF PA with reflected voltage gain, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> = 30.20 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> = 48.6%. Both cases have lower power and PAE as compared to new category of CF PA. This new CF PA with forward voltage gain has, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> = 33.04 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> = 63.7%.","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implementation of Electromagnetic Theory: Improved Analysis and Design for Class F Power Amplifier\",\"authors\":\"Syed Enamur Rahaman, Santanu Dwari, Mirnal Kanti Mandal\",\"doi\":\"10.1002/cta.4268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The general electromagnetic (EM) theory has not yet been applied to the analysis of Class F (CF) power amplifier (PA). In this paper, an alternative approach for CF PA is presented based on the EM theory. Theoretical analysis shows that the CF PA can be divided into two broad categories, forward voltage gain, and reflected voltage gain PA. The existing CF PA belongs to the reflected voltage gain PA. Even though both the CF PAs have the same voltage gain, the PA with forward voltage gain provides higher fundamental power <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> and drain efficiency <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> than that CF PA with reflected voltage gain and Class B PA. This important conclusion is obtained as a result of this analysis, which cannot be explained by available theory in the literature. The theoretical analysis is validated at 2.2 GHz by fabrication and measurements. According to the results, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@B</jats:italic></jats:sub> = 31.8 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@B</jats:italic></jats:sub> = 53.27% in Class B PA. In CF PA with reflected voltage gain, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> = 30.20 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> = 48.6%. Both cases have lower power and PAE as compared to new category of CF PA. This new CF PA with forward voltage gain has, <jats:italic>P</jats:italic><jats:sub><jats:italic>s</jats:italic>,1<jats:italic>@F</jats:italic></jats:sub> = 33.04 dBm and <jats:italic>PAE</jats:italic><jats:sub><jats:italic>@F</jats:italic></jats:sub> = 63.7%.\",\"PeriodicalId\":13874,\"journal\":{\"name\":\"International Journal of Circuit Theory and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-09-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuit Theory and Applications\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1002/cta.4268\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1002/cta.4268","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

一般电磁(EM)理论尚未应用于 F 类(CF)功率放大器(PA)的分析。本文提出了一种基于电磁理论的 CF 功率放大器替代方法。理论分析表明,CF PA 可分为两大类,即正向电压增益 PA 和反射电压增益 PA。现有的 CF PA 属于反射电压增益 PA。尽管两种 CF 功率放大器的电压增益相同,但具有正向电压增益的功率放大器比具有反射电压增益的 CF 功率放大器和 B 类功率放大器提供更高的基本功率 Ps,1@F 和漏极效率 PAE@F。这一重要结论是通过分析得出的,而文献中的现有理论无法解释这一结论。理论分析在 2.2 GHz 频率下通过制造和测量得到了验证。结果显示,在 B 类功率放大器中,Ps,1@B = 31.8 dBm,PAE@B = 53.27%。在具有反射电压增益的 CF 功率放大器中,Ps,1@F = 30.20 dBm,PAE@F = 48.6%。与新型 CF 功率放大器相比,这两种情况的功率和 PAE 都较低。这种新型 CF 功率放大器的正向电压增益为 Ps,1@F = 33.04 dBm,PAE@F = 63.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implementation of Electromagnetic Theory: Improved Analysis and Design for Class F Power Amplifier
The general electromagnetic (EM) theory has not yet been applied to the analysis of Class F (CF) power amplifier (PA). In this paper, an alternative approach for CF PA is presented based on the EM theory. Theoretical analysis shows that the CF PA can be divided into two broad categories, forward voltage gain, and reflected voltage gain PA. The existing CF PA belongs to the reflected voltage gain PA. Even though both the CF PAs have the same voltage gain, the PA with forward voltage gain provides higher fundamental power Ps,1@F and drain efficiency PAE@F than that CF PA with reflected voltage gain and Class B PA. This important conclusion is obtained as a result of this analysis, which cannot be explained by available theory in the literature. The theoretical analysis is validated at 2.2 GHz by fabrication and measurements. According to the results, Ps,1@B = 31.8 dBm and PAE@B = 53.27% in Class B PA. In CF PA with reflected voltage gain, Ps,1@F = 30.20 dBm and PAE@F = 48.6%. Both cases have lower power and PAE as compared to new category of CF PA. This new CF PA with forward voltage gain has, Ps,1@F = 33.04 dBm and PAE@F = 63.7%.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
International Journal of Circuit Theory and Applications
International Journal of Circuit Theory and Applications 工程技术-工程:电子与电气
CiteScore
3.60
自引率
34.80%
发文量
277
审稿时长
4.5 months
期刊介绍: The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信