V. D. Zhivulko, A. V. Mudryi, O M. Borodavchenko, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, M. V. Yakushev
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引用次数: 0
摘要
研究了不同剂量的 4-MeV 电子辐照对太阳能电池 Cu(In,Ga)(S,Se)2 薄膜中非平衡态电荷载流子辐射重组的影响。非辐照和辐照直接隙 Cu(In,Ga)(S,Se)2固溶体在 ~0.9-1.2 eV 能量范围内的近边光致发光 (PL) 是由光学带间跃迁以及在强电位波动下通过受体和供体型结构缺陷的能级发生的辐射重组引起的。在 5-300 K 温度范围内测量的 PL 光谱显示，在不同剂量的电子辐照后，薄膜中的近边 PL 带最大值发生了能量移动，其强度也发生了重新分布。非辐射重组的活化能是根据聚光带强度的淬灭确定的。讨论了未辐照和电子辐照 Cu(In,Ga)(S,Se)2 固溶体中结构缺陷的可能性质。
Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells
The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se)2 thin films of solar cells was studied. Near-edge photoluminescence (PL) in the energy range ~0.9–1.2 eV in nonirradiated and irradiated direct-gap Cu(In,Ga)(S,Se)2 solid solutions was caused by optical interband transitions and radiative recombination through energy levels of acceptor- and donor-type structure defects in the presence of strong potential fluctuations. PL spectra measured in the temperature range 5–300 K exhibited energy shifts of the near-edge PL band maxima and redistributions of their intensities in thin films after irradiation with different doses of electrons. The activation energies of nonradiative recombination were determined from the quenching of PL band intensities. The possible nature of structural defects in nonirradiated and electron-irradiated Cu(In,Ga)(S,Se)2 solid solutions was discussed.
期刊介绍：
Journal of Applied Spectroscopy reports on many key applications of spectroscopy in chemistry, physics, metallurgy, and biology. An increasing number of papers focus on the theory of lasers, as well as the tremendous potential for the practical applications of lasers in numerous fields and industries.
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