Microstructure and Mechanical Properties of Low Stacking-Fault Energy Cu-Based Alloy Wires

Innovations in electronic devices and their capabilities have driven the demand for improved conductive materials relevant to device fabrication. To gain insights on developing solid solution-type Cu alloy thin wires with a superior balance of strength and conductivity, this study investigated variations in the microstructures and properties of pure Cu wires and Cu–5 at. pct Zn, Cu–5 at. pct Al, and Cu–5 at. pct In alloy wires during intense drawing and analyzed the effects of stacking-fault energy (SFE) of Cu alloys on their microstructural evolution. During the initial drawing stages, lower SFE Cu–5 at. pct Al and Cu–5 at. pct In alloys yielded more high-density deformation twins than pure Cu and Cu–5 at. pct Zn. Deformation twins promoted grain refinement during drawing. Effective grain refinement and dislocation accumulation during drawing in low-SFE Cu alloys substantially strengthened them without adversely impacting electrical conductivity. During intense drawing in the Cu–5 at. pct In alloy wires, ultrafine fibrous grains (diameter ~ 80 nm) and a high-dislocation density yielded excellent tensile strength and conductivity. These results indicate that adjusting the solute element content in Cu matrix to reduce SFE and optimizing deformation strain via wire drawing significantly improve alloy wire performance.