Numerical Investigation of the Impact of Temperature on a-Si and GaAs/a-Si Semiconductor Solar Cells

There is a pressing need for investigations of solar conversion systems to enhance and perfect the use of this expandable energy resource. This necessitates additional research on the development of solar cells, which are the mainstay of these systems. In this regard, the purpose of this study is to examine, using numerical modeling, the impact of cell temperatures in the range of 270–340 K on solar cell performance and efficiency. Two configurations are considered based on different overlapping materials. A solar cell type ZnO/a-Si(n)/a-Si(p) (single-junction) with thickness of 25 nm, 50 nm, and 2500 nm, respectively, and a solar cell type ZnO/GaAs(p)/a-Si(n)/a-Si(p) (double-junction) with thickness of 25 nm, 100 nm, 50 nm, and 2500 nm, respectively, are examined. The electrical characteristics, fill factor (FF), and efficiency (ɳ) are extracted to highlight the results of the present study. Numerical analysis was performed using AMPS-1D (One-Dimensional Device Simulation for Analysis of Microelectronic and Photonic Structures), a modeling and analysis program. This analysis enabled the establishment of a causal relationship between the features of the considered solar cells and their corresponding material attributes, and the production process. After different adjustments and refinements, the results for the single-junction cell presented parameter values of \({J}_{\text{SC}}=\text{32.21 m}\) A/cm², \({V}_{\text{OC}}=\text{0.81 V}\), and FF = 0.75, resulting in efficiency of ɳ = 19.58%. For the double-junction cell, the analysis revealed parameter values of \({J}_{\text{SC}}=\text{37.75 mA}/{\text{cm}}^{2}\), \({V}_{\text{OC}}=\text{0.789 V}\), and FF = 0.86, corresponding to efficiency of ɳ = 25.70%.