{"title":"模拟热电半导体器件的保守数值算法与无条件最佳收敛分析","authors":"Xindong Li, Wenwen Xu","doi":"10.1016/j.camwa.2024.09.002","DOIUrl":null,"url":null,"abstract":"<div><p>We propose conservative type numerical method to simulate thermoelectrical semiconductor device problem, in which mixed finite element method used for electric potential equation, conservative characteristic finite element method for electron and hole concentration equations, and standard finite element method for heat conduction equation. By temporal-spatial error splitting argument, the optimal error estimates without certain time step restriction are derived, and low order convergence rate of electrostatic potential and electric field intensity will not affect the accuracy of the electron, hole density and temperature. Numerical tests are performed to validate the theoretical results and application performance of the given method.</p></div>","PeriodicalId":55218,"journal":{"name":"Computers & Mathematics with Applications","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Conservative numerical algorithm for simulating thermoelectrical semiconductor device with unconditional optimal convergence analysis\",\"authors\":\"Xindong Li, Wenwen Xu\",\"doi\":\"10.1016/j.camwa.2024.09.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We propose conservative type numerical method to simulate thermoelectrical semiconductor device problem, in which mixed finite element method used for electric potential equation, conservative characteristic finite element method for electron and hole concentration equations, and standard finite element method for heat conduction equation. By temporal-spatial error splitting argument, the optimal error estimates without certain time step restriction are derived, and low order convergence rate of electrostatic potential and electric field intensity will not affect the accuracy of the electron, hole density and temperature. Numerical tests are performed to validate the theoretical results and application performance of the given method.</p></div>\",\"PeriodicalId\":55218,\"journal\":{\"name\":\"Computers & Mathematics with Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computers & Mathematics with Applications\",\"FirstCategoryId\":\"100\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S089812212400405X\",\"RegionNum\":2,\"RegionCategory\":\"数学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATHEMATICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computers & Mathematics with Applications","FirstCategoryId":"100","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S089812212400405X","RegionNum":2,"RegionCategory":"数学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATHEMATICS, APPLIED","Score":null,"Total":0}
Conservative numerical algorithm for simulating thermoelectrical semiconductor device with unconditional optimal convergence analysis
We propose conservative type numerical method to simulate thermoelectrical semiconductor device problem, in which mixed finite element method used for electric potential equation, conservative characteristic finite element method for electron and hole concentration equations, and standard finite element method for heat conduction equation. By temporal-spatial error splitting argument, the optimal error estimates without certain time step restriction are derived, and low order convergence rate of electrostatic potential and electric field intensity will not affect the accuracy of the electron, hole density and temperature. Numerical tests are performed to validate the theoretical results and application performance of the given method.
期刊介绍:
Computers & Mathematics with Applications provides a medium of exchange for those engaged in fields contributing to building successful simulations for science and engineering using Partial Differential Equations (PDEs).