基于 CMOS 的微型磁通门,带赛道磁芯和电磁线圈

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jiří Maier , Pavel Ripka , Poki Chen
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引用次数: 0

摘要

这项工作介绍了一种利用 CMOS 芯片技术制造的集成磁通门传感器。该传感器采用 "赛道 "形状的磁芯。磁芯使用的材料是 VITROVAC 6025F,形状由 25 μm 厚的金属箔激光切割而成。线圈是利用芯片的金属层和键合导线制作的螺线管。感应线圈和激励线圈的匝数分别为 60 和 40。采用台积电 D35 技术制造。磁芯尺寸为 8 毫米 × 1.75 毫米。使用正弦波激励对传感器进行了开环运行测试。灵敏度随着频率的增加而增加,最高可达 1.5 MHz,达到 5000 V/T。这一数值明显高于使用扁平拾波线圈所能达到的数值(约 10 V/T)。使磁芯完全饱和需要 110 mA 的激励电流,这导致线圈中的功率损耗达到 300 mW。在 1 MHz 的激励下,磁芯损耗为 100 mW。根据激励信号参数的不同,1 Hz 时的噪声可能低至 2nT/Hz。典型偏移低于 1 μT。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

CMOS-based micro-fluxgate with racetrack core and solenoid coils

CMOS-based micro-fluxgate with racetrack core and solenoid coils

This work introduces an integrated fluxgate sensor fabricated using CMOS chip technology. The sensor uses a “racetrack” shape of the core. The material used for the core is VITROVAC 6025F, and the shape was laser-cut from 25 μm thick foil. The coils are solenoids fabricated using metal layers of the chip and bonding wires. Sensing and excitation coils have 60 and 40 turns respectively. TSMC D35 technology was used for fabrication. The size of the core is 8 mm × 1.75 mm. Dimensions of the chip are 8 mm × 2.7 mm (21.6 mm2).

The sensor was tested in open-loop operation using a sinewave excitation. Sensitivity increases with frequency up to 1.5 MHz, reaching 5000 V/T. This is a significantly higher value than what can be achieved using a flat pick-up coil (around 10 V/T). Fully saturating the core requires a 110 mA excitation current, leading to 300 mW power dissipation in the coil. The Core loss is 100 mW at 1 MHz excitation. The Noise at 1 Hz may be as low as 2nT/Hz depending on excitation signal parameters. The typical offset is below 1 μT.

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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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