{"title":"基于 CMOS 的微型磁通门,带赛道磁芯和电磁线圈","authors":"Jiří Maier , Pavel Ripka , Poki Chen","doi":"10.1016/j.sna.2024.115886","DOIUrl":null,"url":null,"abstract":"<div><p>This work introduces an integrated fluxgate sensor fabricated using CMOS chip technology. The sensor uses a “racetrack” shape of the core. The material used for the core is VITROVAC 6025F, and the shape was laser-cut from 25 <span><math><mi>μ</mi></math></span>m thick foil. The coils are solenoids fabricated using metal layers of the chip and bonding wires. Sensing and excitation coils have 60 and 40 turns respectively. TSMC D35 technology was used for fabrication. The size of the core is 8 mm <span><math><mo>×</mo></math></span> 1.75 mm. Dimensions of the chip are 8 mm <span><math><mo>×</mo></math></span> 2.7 mm (21.6 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>).</p><p>The sensor was tested in open-loop operation using a sinewave excitation. Sensitivity increases with frequency up to 1.5 MHz, reaching 5000 V/T. This is a significantly higher value than what can be achieved using a flat pick-up coil (around 10 V/T). Fully saturating the core requires a 110 mA excitation current, leading to 300 mW power dissipation in the coil. The Core loss is 100 mW at 1 MHz excitation. The Noise at 1 Hz may be as low as <span><math><mrow><mn>2</mn><mspace></mspace><mstyle><mi>n</mi><mi>T</mi></mstyle><mo>/</mo><mstyle><msqrt><mrow><mi>H</mi></mrow></msqrt><mi>z</mi></mstyle></mrow></math></span> depending on excitation signal parameters. The typical offset is below 1 <span><math><mi>μ</mi></math></span>T.</p></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"379 ","pages":"Article 115886"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS-based micro-fluxgate with racetrack core and solenoid coils\",\"authors\":\"Jiří Maier , Pavel Ripka , Poki Chen\",\"doi\":\"10.1016/j.sna.2024.115886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work introduces an integrated fluxgate sensor fabricated using CMOS chip technology. The sensor uses a “racetrack” shape of the core. The material used for the core is VITROVAC 6025F, and the shape was laser-cut from 25 <span><math><mi>μ</mi></math></span>m thick foil. The coils are solenoids fabricated using metal layers of the chip and bonding wires. Sensing and excitation coils have 60 and 40 turns respectively. TSMC D35 technology was used for fabrication. The size of the core is 8 mm <span><math><mo>×</mo></math></span> 1.75 mm. Dimensions of the chip are 8 mm <span><math><mo>×</mo></math></span> 2.7 mm (21.6 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>).</p><p>The sensor was tested in open-loop operation using a sinewave excitation. Sensitivity increases with frequency up to 1.5 MHz, reaching 5000 V/T. This is a significantly higher value than what can be achieved using a flat pick-up coil (around 10 V/T). Fully saturating the core requires a 110 mA excitation current, leading to 300 mW power dissipation in the coil. The Core loss is 100 mW at 1 MHz excitation. The Noise at 1 Hz may be as low as <span><math><mrow><mn>2</mn><mspace></mspace><mstyle><mi>n</mi><mi>T</mi></mstyle><mo>/</mo><mstyle><msqrt><mrow><mi>H</mi></mrow></msqrt><mi>z</mi></mstyle></mrow></math></span> depending on excitation signal parameters. The typical offset is below 1 <span><math><mi>μ</mi></math></span>T.</p></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":\"379 \",\"pages\":\"Article 115886\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S092442472400880X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092442472400880X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
CMOS-based micro-fluxgate with racetrack core and solenoid coils
This work introduces an integrated fluxgate sensor fabricated using CMOS chip technology. The sensor uses a “racetrack” shape of the core. The material used for the core is VITROVAC 6025F, and the shape was laser-cut from 25 m thick foil. The coils are solenoids fabricated using metal layers of the chip and bonding wires. Sensing and excitation coils have 60 and 40 turns respectively. TSMC D35 technology was used for fabrication. The size of the core is 8 mm 1.75 mm. Dimensions of the chip are 8 mm 2.7 mm (21.6 mm).
The sensor was tested in open-loop operation using a sinewave excitation. Sensitivity increases with frequency up to 1.5 MHz, reaching 5000 V/T. This is a significantly higher value than what can be achieved using a flat pick-up coil (around 10 V/T). Fully saturating the core requires a 110 mA excitation current, leading to 300 mW power dissipation in the coil. The Core loss is 100 mW at 1 MHz excitation. The Noise at 1 Hz may be as low as depending on excitation signal parameters. The typical offset is below 1 T.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...