用反应性大气等离子体射流将微米图案转移到熔融石英中

IF 7.5 Q1 CHEMISTRY, PHYSICAL
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引用次数: 0

摘要

等离子刻蚀图案转移是微电子和其他微米技术的传统标准技术。这些技术需要真空条件,从而限制了产量、尺寸和低成本制造。低成本大气等离子体技术的最新发展可能适合在无真空条件下实现图案转移。反应性大气等离子体喷射蚀刻已被用于将铝掩膜图案转移到熔融石英上。将熔融石英晶片上宽度为 2.5 至 50 微米的铝线图案暴露在静态和扫描 CF4/O2 反应性大气等离子体射流中,射流的足迹直径为 0.85 毫米(半最大全宽),结果只蚀刻了二氧化硅,并以约 200 纳米/秒的蚀刻速率产生了近乎各向同性的蚀刻。因此,观察到了线变窄、梯形线截面和蚀刻不足。成功转移的线条图案具有所展示的宽度和深度,在各个应用领域都具有技术意义。因此,这种方法通过使用反应性大气等离子体喷射蚀刻技术进行微米级图案转移,实现了熔融石英的低成本图案化。这一进步解决了传统真空蚀刻和湿蚀刻方法的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transfer of micron pattern with reactive atmospheric plasma jets into fused silica

Pattern transfer by plasma etching is a traditional standard technology in microelectronics and other micron technologies. These technologies require vacuum conditions, which limit throughput, size, and low-cost fabrication. Recent developments in low cost atmospheric plasma technologies may be suitable to realize pattern transfer without vacuum conditions. Reactive atmospheric plasma jet etching has been used to transfer aluminum mask patterns to fused silica. Aluminum line patterns of 2.5 to 50 µm width on fused silica wafer are exposed to a static as well as a scanning CF4/O2 reactive atmospheric plasma jet with a footprint diameter of 0.85 mm (full width at half maximum), resulting in etching only the SiO2 and causing a nearly isotropic etch with an etch rate of about 200 nm/s. As a result, line narrowing, trapezoidal line cross-sections, and under-etching were observed. The successfully transferred line patterns with the demonstrated widths and depths are of technological interest in various fields of application. Therefore, this approach enables low-cost patterning of fused silica through the use of reactive atmospheric plasma jet etching for micron-scale pattern transfer. This advancement addresses the limitations of both traditional vacuum-based and wet etching methods.

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CiteScore
8.10
自引率
1.60%
发文量
128
审稿时长
66 days
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