{"title":"用于三维微结构的微米厚硅薄膜蠕变过程中的晶体取向依赖性","authors":"","doi":"10.1016/j.sna.2024.115861","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the steady-state creep deformation properties of 5 μm-thick single crystal silicon (Si) films at elevated temperatures were investigated using punch creep-forming tests for the design of three-dimensional (3-D) microstructured MEMS. The relationship between the creep strain rate and stress of the Si films with {100}, {110}, and {111} planes at temperatures of 1223–1323 K was derived using finite element analysis following punch creep-forming tests, and a power-law creep constitutive equation for Si films was determined. The steady-state creep properties of the Si film samples varied clearly with crystallographic orientations. Among the three crystallographic orientations, the creep strain rate of the micron-thick Si films was the fastest for the {011} plane, followed by the {111} and {001} planes, in the applied stress range of 110 MPa to 220 MPa. This is consistent with the increasing order of magnitude of the thermal activation energy. The crystallographic orientation dependence of the steady-state creep properties of Si films is discussed based on the mobility of dislocation gliding per unit lattice and scanning electron microscope observations. The sample-size dependence of the creep strain rate of Si with the {001} plane was clearly observed between the micron- and millimeter-thick samples, which was attributed to the difference in the frequency factor of the power-law creep. However, the thermal-activation energy remained constant. This study successfully revealed the steady-state creep properties of Si films and provided useful engineering data for the design of 3-D Si-MEMS fabrication by the plastic processing of Si films.</p></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystallographic orientation dependence in creep deformation of micron-thick silicon films for 3-D microstructures\",\"authors\":\"\",\"doi\":\"10.1016/j.sna.2024.115861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, the steady-state creep deformation properties of 5 μm-thick single crystal silicon (Si) films at elevated temperatures were investigated using punch creep-forming tests for the design of three-dimensional (3-D) microstructured MEMS. The relationship between the creep strain rate and stress of the Si films with {100}, {110}, and {111} planes at temperatures of 1223–1323 K was derived using finite element analysis following punch creep-forming tests, and a power-law creep constitutive equation for Si films was determined. The steady-state creep properties of the Si film samples varied clearly with crystallographic orientations. Among the three crystallographic orientations, the creep strain rate of the micron-thick Si films was the fastest for the {011} plane, followed by the {111} and {001} planes, in the applied stress range of 110 MPa to 220 MPa. This is consistent with the increasing order of magnitude of the thermal activation energy. The crystallographic orientation dependence of the steady-state creep properties of Si films is discussed based on the mobility of dislocation gliding per unit lattice and scanning electron microscope observations. The sample-size dependence of the creep strain rate of Si with the {001} plane was clearly observed between the micron- and millimeter-thick samples, which was attributed to the difference in the frequency factor of the power-law creep. However, the thermal-activation energy remained constant. This study successfully revealed the steady-state creep properties of Si films and provided useful engineering data for the design of 3-D Si-MEMS fabrication by the plastic processing of Si films.</p></div>\",\"PeriodicalId\":21689,\"journal\":{\"name\":\"Sensors and Actuators A-physical\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators A-physical\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0924424724008550\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724008550","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Crystallographic orientation dependence in creep deformation of micron-thick silicon films for 3-D microstructures
In this study, the steady-state creep deformation properties of 5 μm-thick single crystal silicon (Si) films at elevated temperatures were investigated using punch creep-forming tests for the design of three-dimensional (3-D) microstructured MEMS. The relationship between the creep strain rate and stress of the Si films with {100}, {110}, and {111} planes at temperatures of 1223–1323 K was derived using finite element analysis following punch creep-forming tests, and a power-law creep constitutive equation for Si films was determined. The steady-state creep properties of the Si film samples varied clearly with crystallographic orientations. Among the three crystallographic orientations, the creep strain rate of the micron-thick Si films was the fastest for the {011} plane, followed by the {111} and {001} planes, in the applied stress range of 110 MPa to 220 MPa. This is consistent with the increasing order of magnitude of the thermal activation energy. The crystallographic orientation dependence of the steady-state creep properties of Si films is discussed based on the mobility of dislocation gliding per unit lattice and scanning electron microscope observations. The sample-size dependence of the creep strain rate of Si with the {001} plane was clearly observed between the micron- and millimeter-thick samples, which was attributed to the difference in the frequency factor of the power-law creep. However, the thermal-activation energy remained constant. This study successfully revealed the steady-state creep properties of Si films and provided useful engineering data for the design of 3-D Si-MEMS fabrication by the plastic processing of Si films.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...