探索基于纯 ZnFe2O4 纳米粒子和掺杂镍的 ZnFe2O4 纳米粒子的电化学动力学行为和界面电荷转移,以实现对氯霉素的超灵敏检测

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0

摘要

纳米 ZnFe2O4(ZFO)材料掺杂了二价过渡金属阳离子 Ni2+(NixZn1-xFe2O4,x=0、0.2、0.4 和 0.8),并通过各种分析技术对其进行了表征。粉末 X 射线衍射显示形成了单相立方尖晶石结构,同时观察到掺杂 Ni2+ 的样品晶体结构趋于稳定。随着 NixZn1-xFe2O4 中 Ni2+ 浓度的增加,平均结晶尺寸、d-间距和晶格参数也随之增加,这是由于离子半径、A-B 位点的阳离子分布以及 ZFO 结构中表面氧空位的产生造成的。从电化学测量结果来看,与裸 SPE 相比,NixZn1-xFe2O4 基电极在电荷转移能力和电导率方面都有很好的提高,具有最高的速率常数(0.018 ms-1)、最低的峰-峰分离电压(206 mV)、最低的 Rct(118 Ω)和最大的电化学活性面积(0.248 cm2)。其中,Ni0.8Zn0.2Fe2O4/SPE 具有出色的电化学性能,实现了最佳的传感性能,浓度线性范围从 0.25 μM 扩大到 50 μM,氯霉素的检测限低至 0.2 μM。取得这一积极进展的最重要原因是在 ZFO 主结构中掺入镍的独特协同效应。与纯 ZFO 基电极相比,掺杂了镍的 ZFO 基电极在吸附容量 (Г)(高出 1.4 倍)、氧空位数、电荷转移速率常数(高出约 1.15 倍)和催化速率常数(高出 30 倍)方面都有显著提高。此外,我们还探讨了解释这些令人印象深刻的增强效果的详细假设和可能机制。我们的研究深入探讨了掺镍与电化学特性之间的相关性,这对于在各种应用中定制尖晶铁氧体的电化学性能以及设计新型尖晶铁氧体纳米材料具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring electrochemical kinetic behaviors and interfacial charge transfer of pure and Ni-doped ZnFe2O4 nanoparticles-based sensing nanoplatform for ultra-sensitive detection of chloramphenicol

ZnFe2O4 (ZFO) nanomaterial was doped with a divalent transition metal cation of Ni2+ (NixZn1-xFe2O4, x=0, 0.2, 0.4, and 0.8) and characterized by various analytical techniques. Powder X-ray diffraction revealed the formation of a single-phase cubic spinel structure, while the stabilization of crystal structure for Ni2+-doped samples was observed. The average crystalline size, d-spacing, and lattice parameters increased with increasing in Ni2+ concentration within NixZn1-xFe2O4, due to differences in the ionic radius, the cation distribution at A-B sites, and the creation of surface oxygen vacancies within ZFO structure. From electrochemical measurements, NixZn1-xFe2O4-based electrodes showed excellent enhancements in charge transfer ability and conductivity with the highest rate constant (0.018 ms−1), the lowest peak-to-peak separation (206 mV), the lowest Rct (118 Ω), and the largest electrochemical active area (0.248 cm2), compared to that of bare SPE. Among them, Ni0.8Zn0.2Fe2O4/SPE provided outstanding electrochemical behaviors and achieved the best sensing performance with the widened concentration linear range from 0.25 to 50 μM and a rather low detection limit of 0.2 μM for chloramphenicol detection. The most important reason for this positive advance comes from the unique synergistic effects of Ni doping into the ZFO host structure. The excellent enhancements in adsorption capacity (Г) (1.4 times higher), number of oxygen vacancies, charge transfer rate constant (approximately 1.15 times higher), and catalytic rate constant (30 times greater) were recorded at Ni-doped ZFO-based electrodes, compared to pure ZFO-based electrode. Furthermore, the detailed hypotheses and possible mechanisms explaining these impressive enhancements were explored. Our work provides insight into the correlation between the Ni-doping and electrochemical characteristics, which has implications for tailoring the electrochemical performance of spinel ferrites across diverse applications and the design of novel spinel ferrite nanomaterials.

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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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