基于局部无反射设计的高占空比脉冲大功率氮化镓倍增器

IF 1.6 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Chinese Journal of Electronics Pub Date : 2024-09-09 DOI:10.23919/cje.2023.00.179

Yazhou Dong;Tianchi Zhou;Shixiong Liang;Guodong Gu;Hongji Zhou;Jianghua Yu;Hailong Guo;Yaxin Zhang

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引用次数: 0

摘要

研究重点是开发用于太赫兹技术的氮化镓（GaN）肖特基势垒二极管（SBD）倍频器。这些倍频器的低转换效率限制了它们的实际应用。为了应对这一挑战，本文提出了一种基于三维电磁结构的多目标局部无反射设计方法。该方法旨在提高输入功率的耦合效率，减少功率输出的反射。实验结果表明，该方法显著提高了氮化镓 SBD 倍频器的性能，在 175 GHz 频率下效率达到 16.9%，峰值输出功率达到 160 mW。这些结果表明，该方法有助于太赫兹技术 GaN SBD 倍频器的进一步发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design

The study focuses on the development of gallium nitride (GaN) Schottky barrier diode (SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160 mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

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来源期刊

Chinese Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.70

自引率

16.70%

发文量

342

审稿时长

12.0 months

期刊介绍： CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.