在 Ku/K/Ka 波段具有 43-65 dBc 基本抑制的超宽带倍频链

IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Long Wang;Jixin Chen;Debin Hou;Xiaojie Xu;Zekun Li;Dawei Tang;Rui Zhou;Hao Qi;Yu Xiang
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引用次数: 0

摘要

本文提出了一种双平衡倍增器链,它采用 0.13 美元 SiGe BiCMOS 技术,在超宽带上的基波抑制大于 43dBc。为了在超宽带上实现高基波抑制、高输出功率和高转换增益,带有前置和后置驱动器的双平衡倍增器链采用了带宽拓宽技术和接地屏蔽策略。对单平衡和双平衡倍增器进行了分析和比较,重点是它们的基波抑制和电路不平衡。设计了三个倍增器,包括无源单平衡倍增器、有源单平衡倍增器和无源双平衡倍增器,以验证单双平衡倍增器的性能和特性。测量结果表明,与采用相同工艺制造的单平衡倍增器链相比,拟议的双平衡倍增器链的基波抑制能力提高了约 15 dB,相对带宽增加了一倍多。在 13.4 GHz 至 34 GHz 的 86.9% 3 dB 带宽范围内,双平衡倍增器链的峰值输出功率为 14.7 dBm,基波/三次谐波抑制大于 43/33 dBc。据作者所知,在毫米波频段的硅基倍增器中,所提出的双平衡倍增器链显示了最高的超宽带基波抑制能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Ultra-wideband Doubler Chain with 43–65 dBc Fundamental Rejection in Ku/K/Ka Band
In this paper, a double-balanced doubler chain with >43-dBc fundamental rejection over an ultra-wide bandwidth in $0.13-\mu\mathrm{m}$ SiGe BiCMOS technology is proposed. To achieve high fundamental rejection, high output power, and high conversion gain over an ultra-wideband, a double-balanced doubler chain with pre-and post-drivers employs a bandwidth broadening technique and a ground shielding strategy. Analysis and comparison of the single-balanced and double-balanced doublers were conducted, with a focus on their fundamental rejection and circuit imbalance. Three doublers, including a passive single-balanced doubler, an active single-balanced doubler, and a passive double-balanced doubler were designed to verify the performance and characteristics of the single-and double-balanced doublers. Measurements show that the proposed double-balanced doubler chain has approximately 15 dB better fundamental rejection, and more than twice the relative bandwidth compared to the single-balanced doubler chain fabricated with the same process. Over an 86.9% 3-dB bandwidth from 13.4 GHz to 34 GHz, the double-balanced doubler chain delivers 14.7-dBm peak output power and has >43-/33-dBc fundamental/third-harmonic rejection. To the authors' best knowledge, the proposed double-balanced doubler chain shows the highest fundamental rejection over an ultra-wideband among silicon-based doublers at millimeter-wave frequency bands.
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来源期刊
Chinese Journal of Electronics
Chinese Journal of Electronics 工程技术-工程:电子与电气
CiteScore
3.70
自引率
16.70%
发文量
342
审稿时长
12.0 months
期刊介绍: CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.
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