Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths

This work presents a novel three-channel Tree-FET optimized for superior DC and analog performance metrics. The device structure features nanosheets with a width (NS_WD) of 9 nm, a thickness (NS_TH) of 5 nm, and interbidge dimensions of 8 nm in height (IB_HT) and 5 nm in width (IB_WD). The Tree-FET demonstrates an exceptional on/off current ratio of 10⁷ through meticulous engineering, significantly outperforming conventional FET configurations. Our comprehensive study explores the effects of different spacer materials, including HfO₂, Al₂O₃, Si₃N₄, and SiO₂, across varied channel lengths. The superior dielectric properties of HfO₂ contribute to fine-tuning the device's characteristics, making it a standout choice for optimizing performance. Out of all HfO₂ has been found to perform exceptionally well, offering the best combination of electrostatic control and minimized leakage currents. Because the Tree-FET has better electrostatic integrity and can keep working well with different spacer materials and channel lengths, it has much potential as a flexible and valuable part for next-generation semiconductor devices. The promising DC and analog metrics achieved through this novel design pave the way for developing more compact, high-performance electronic components.