{"title":"n-MoO3/p-Si 异质结光电二极管:MoO3 薄膜厚度对紫外线和红外线光电探测器性能的影响","authors":"","doi":"10.1016/j.optmat.2024.116080","DOIUrl":null,"url":null,"abstract":"<div><p>Here, we studied the effect of the MoO<sub>3</sub> thin film thickness on the ultraviolet (UV) and infrared (IR) photodiode properties of the n-MoO<sub>3</sub>/p-Si heterojunction structure. Initially, the metal molybdenum (Mo) thin films with different thicknesses (50,150, and 250 nm) were created via DC magnetron sputtering on a p-type Si substrate. Then, the MoO<sub>3</sub> thin films were synthesized using a thermal oxidation method with an optimal oxygen flow rate of 60sccm. XRD and Raman analysis showed that the structure of prepared thin films has converted from an amorphous to an orthorhombic (α-MoO<sub>3</sub>) crystalline phase with increasing thickness. The optical transmittance of the layers was tuned by controlling the thickness, and the maximum transmittance for the 50 nm-thick film was achieved in the broad wavelength range of 300–1100 nm. The current density–voltage (J–V) characteristics indicate the prepared samples' rectifying behavior under dark conditions. The heterojunction photodiode with a 50 nm-thick MoO<sub>3</sub> layer shows the best performance. This sample had a maximum amount of transmittance in the UV–visible and IR regions, compared to other samples, which leads to efficient electron-hole separation and transportation. This sample demonstrates a significant photoresponse ratio (I<sub>Light</sub>/I<sub>Dark</sub>) of about 55 and 52.5 in the ultraviolet (UV) and infrared (IR) regions, respectively.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8000,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The n-MoO3/p-Si heterojunction photodiode: Influence of the MoO3 film thickness on the ultraviolet and infrared photodetector performance\",\"authors\":\"\",\"doi\":\"10.1016/j.optmat.2024.116080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Here, we studied the effect of the MoO<sub>3</sub> thin film thickness on the ultraviolet (UV) and infrared (IR) photodiode properties of the n-MoO<sub>3</sub>/p-Si heterojunction structure. Initially, the metal molybdenum (Mo) thin films with different thicknesses (50,150, and 250 nm) were created via DC magnetron sputtering on a p-type Si substrate. Then, the MoO<sub>3</sub> thin films were synthesized using a thermal oxidation method with an optimal oxygen flow rate of 60sccm. XRD and Raman analysis showed that the structure of prepared thin films has converted from an amorphous to an orthorhombic (α-MoO<sub>3</sub>) crystalline phase with increasing thickness. The optical transmittance of the layers was tuned by controlling the thickness, and the maximum transmittance for the 50 nm-thick film was achieved in the broad wavelength range of 300–1100 nm. The current density–voltage (J–V) characteristics indicate the prepared samples' rectifying behavior under dark conditions. The heterojunction photodiode with a 50 nm-thick MoO<sub>3</sub> layer shows the best performance. This sample had a maximum amount of transmittance in the UV–visible and IR regions, compared to other samples, which leads to efficient electron-hole separation and transportation. This sample demonstrates a significant photoresponse ratio (I<sub>Light</sub>/I<sub>Dark</sub>) of about 55 and 52.5 in the ultraviolet (UV) and infrared (IR) regions, respectively.</p></div>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2024-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925346724012631\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346724012631","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
The n-MoO3/p-Si heterojunction photodiode: Influence of the MoO3 film thickness on the ultraviolet and infrared photodetector performance
Here, we studied the effect of the MoO3 thin film thickness on the ultraviolet (UV) and infrared (IR) photodiode properties of the n-MoO3/p-Si heterojunction structure. Initially, the metal molybdenum (Mo) thin films with different thicknesses (50,150, and 250 nm) were created via DC magnetron sputtering on a p-type Si substrate. Then, the MoO3 thin films were synthesized using a thermal oxidation method with an optimal oxygen flow rate of 60sccm. XRD and Raman analysis showed that the structure of prepared thin films has converted from an amorphous to an orthorhombic (α-MoO3) crystalline phase with increasing thickness. The optical transmittance of the layers was tuned by controlling the thickness, and the maximum transmittance for the 50 nm-thick film was achieved in the broad wavelength range of 300–1100 nm. The current density–voltage (J–V) characteristics indicate the prepared samples' rectifying behavior under dark conditions. The heterojunction photodiode with a 50 nm-thick MoO3 layer shows the best performance. This sample had a maximum amount of transmittance in the UV–visible and IR regions, compared to other samples, which leads to efficient electron-hole separation and transportation. This sample demonstrates a significant photoresponse ratio (ILight/IDark) of about 55 and 52.5 in the ultraviolet (UV) and infrared (IR) regions, respectively.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.