Yao Wang , Jiale Li , Wenkai Wu , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao
{"title":"通过 MOCVD 同源外延技术提高脉冲掺杂 Sn (-201) β-Ga2O3 薄膜的电气性能","authors":"Yao Wang , Jiale Li , Wenkai Wu , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao","doi":"10.1016/j.surfin.2024.105056","DOIUrl":null,"url":null,"abstract":"<div><p>Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) films were deposited on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga<sub>2</sub>O<sub>3</sub> films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm<sup>2</sup>/V·s, and a carrier concentration of 1.82 × 10<sup>18</sup> cm<sup>-3</sup>. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.</p></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":null,"pages":null},"PeriodicalIF":5.7000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy\",\"authors\":\"Yao Wang , Jiale Li , Wenkai Wu , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao\",\"doi\":\"10.1016/j.surfin.2024.105056\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) films were deposited on (-201) β-Ga<sub>2</sub>O<sub>3</sub> substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga<sub>2</sub>O<sub>3</sub> films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm<sup>2</sup>/V·s, and a carrier concentration of 1.82 × 10<sup>18</sup> cm<sup>-3</sup>. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.</p></div>\",\"PeriodicalId\":22081,\"journal\":{\"name\":\"Surfaces and Interfaces\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2024-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surfaces and Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468023024012124\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023024012124","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy
Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga2O3) films were deposited on (-201) β-Ga2O3 substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga2O3 films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm2/V·s, and a carrier concentration of 1.82 × 1018 cm-3. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.
期刊介绍：
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)
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