{"title":"SiC衬底上ScAlN/GaN/β-Ga2O3和ScAlN/InGaN/GaN/β-Ga2O3 HEMT的直流和射频分析","authors":"M Jagadesh , A Karthikeyan , Devaraj Somasundaram","doi":"10.1016/j.mejo.2024.106394","DOIUrl":null,"url":null,"abstract":"<div><p>Scandium aluminum nitride (Sc<sub>x</sub>Al<sub>1-x</sub>N) is a promising material among group III nitrides, offering outstanding polarization properties resulting in very large carrier densities. We report the comparative analysis of Sc<sub>0.18</sub>Al<sub>0.72</sub>N/GaN/β-Ga<sub>2</sub>O<sub>3</sub> and Sc<sub>0.18</sub>Al<sub>0.72</sub>N/InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> HEMTs on Silicon carbide substrate. L<sub>G</sub> = 55 nm, Sc<sub>0.18</sub>Al<sub>0.72</sub>N/GaN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT demonstrated maximum current density (I<sub>DS</sub>) of 4.38 A/mm, very large carrier density (n<sub>s</sub>) of 2.34 × 10<sup>13</sup> cm<sup>−2</sup>, large breakdown voltage (74 V) with low on-resistance (R<sub>on</sub> ∼ 0.2 Ω mm), and cut-off frequency (f<sub>T</sub>)/maximum oscillation frequency (f<sub>max</sub>) of 220/242 GHz. Introduction of a very thin 5 nm In<sub>0.1</sub>Ga<sub>0.9</sub>N layer in the channel, further improves the 2DEG (two-dimensional electron density), drain current, breakdown voltage. Furthermore, Sc<sub>0.18</sub>Al<sub>0.72</sub>N/InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure shows stable transconductance (g<sub>m</sub>) over wide gate bias. A gate voltage swing (GVS) of 7.72, I<sub>DS</sub> of 6.08 A/mm, and V<sub>BR</sub> of 105 V with R<sub>on</sub> ∼ 0.138 recorded. These findings show the merits of scandium aluminium nitride barrier material, which enables the HEMTs for next generation radar and telecommunications.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate\",\"authors\":\"M Jagadesh , A Karthikeyan , Devaraj Somasundaram\",\"doi\":\"10.1016/j.mejo.2024.106394\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Scandium aluminum nitride (Sc<sub>x</sub>Al<sub>1-x</sub>N) is a promising material among group III nitrides, offering outstanding polarization properties resulting in very large carrier densities. We report the comparative analysis of Sc<sub>0.18</sub>Al<sub>0.72</sub>N/GaN/β-Ga<sub>2</sub>O<sub>3</sub> and Sc<sub>0.18</sub>Al<sub>0.72</sub>N/InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> HEMTs on Silicon carbide substrate. L<sub>G</sub> = 55 nm, Sc<sub>0.18</sub>Al<sub>0.72</sub>N/GaN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT demonstrated maximum current density (I<sub>DS</sub>) of 4.38 A/mm, very large carrier density (n<sub>s</sub>) of 2.34 × 10<sup>13</sup> cm<sup>−2</sup>, large breakdown voltage (74 V) with low on-resistance (R<sub>on</sub> ∼ 0.2 Ω mm), and cut-off frequency (f<sub>T</sub>)/maximum oscillation frequency (f<sub>max</sub>) of 220/242 GHz. Introduction of a very thin 5 nm In<sub>0.1</sub>Ga<sub>0.9</sub>N layer in the channel, further improves the 2DEG (two-dimensional electron density), drain current, breakdown voltage. Furthermore, Sc<sub>0.18</sub>Al<sub>0.72</sub>N/InGaN/GaN/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure shows stable transconductance (g<sub>m</sub>) over wide gate bias. A gate voltage swing (GVS) of 7.72, I<sub>DS</sub> of 6.08 A/mm, and V<sub>BR</sub> of 105 V with R<sub>on</sub> ∼ 0.138 recorded. These findings show the merits of scandium aluminium nitride barrier material, which enables the HEMTs for next generation radar and telecommunications.</p></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124000985\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000985","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
Scandium aluminum nitride (ScxAl1-xN) is a promising material among group III nitrides, offering outstanding polarization properties resulting in very large carrier densities. We report the comparative analysis of Sc0.18Al0.72N/GaN/β-Ga2O3 and Sc0.18Al0.72N/InGaN/GaN/β-Ga2O3 HEMTs on Silicon carbide substrate. LG = 55 nm, Sc0.18Al0.72N/GaN/β-Ga2O3 HEMT demonstrated maximum current density (IDS) of 4.38 A/mm, very large carrier density (ns) of 2.34 × 1013 cm−2, large breakdown voltage (74 V) with low on-resistance (Ron ∼ 0.2 Ω mm), and cut-off frequency (fT)/maximum oscillation frequency (fmax) of 220/242 GHz. Introduction of a very thin 5 nm In0.1Ga0.9N layer in the channel, further improves the 2DEG (two-dimensional electron density), drain current, breakdown voltage. Furthermore, Sc0.18Al0.72N/InGaN/GaN/β-Ga2O3 heterostructure shows stable transconductance (gm) over wide gate bias. A gate voltage swing (GVS) of 7.72, IDS of 6.08 A/mm, and VBR of 105 V with Ron ∼ 0.138 recorded. These findings show the merits of scandium aluminium nitride barrier material, which enables the HEMTs for next generation radar and telecommunications.
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Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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