具有光可调场效应的二维铁电半导体浮动栅晶体管，用于存储器和光电开关

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-06 DOI:10.1063/5.0197542

Yurong Jiang, Rui Wang, Yuting Peng, Hongzhi Li, Xueping Li, Yiduo Shao, Xiaobing Yan, Liangzhi Kou, Congxin Xia

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引用次数: 0

摘要

铁电场效应晶体管（Fe-FET）为神经形态计算提供了前景广阔的候选器件。然而，要实现光可调场效应仍具有挑战性，这限制了光突触的功能。本研究提出了一种基于 MoS2/h-BN/α-In2Se3 范德华异质结（vdWHs）的铁电半导体浮栅晶体管（FSF-FET），其中二维铁电半导体α-In2Se3 和电介质 h-BN 分别作为电荷捕获层和阻止层。该器件具有优异的存储器性能，包括超过 107 的高编程/消除比、74.69% 的大存储器窗口比和良好的非挥发性。此外，FSF-FET 还具有光可调的突触行为，包括高达 236% 的成对脉冲促进和明显的从短期可塑性到长期可塑性的过渡。在光脉冲和电脉冲双模式调制下，识别率高达 93.9%。铁电半导体浮动栅设计为实现用于光诱导的 Fe-FET 的光可调场效应开辟了一条途径。

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Two-dimensional ferroelectric semiconductor floating-gate transistor with light-tunable field effect for memory and photo-synapse

Ferroelectric field effect transistors (Fe-FETs) offer promising candidates for neuromorphic computing. However, it is still challenging to achieve a light-tunable field effect, which limits the function of photo-synapse. In this work, a ferroelectric semiconductor floating-gate transistor (FSF-FET) is proposed based on MoS2/h-BN/α-In2Se3 van der Waals heterojunctions (vdWHs), in which the two-dimensional ferroelectric semiconducting α-In2Se3 and dielectric h-BN serve as the trapped layer of charges and prevent layer, respectively. The excellent memory performances are exhibited, including a high programming/erasing ratio of over 107, a large memory window ratio of 74.69%, and good non-volatility. Moreover, the FSF-FETs also possess the light-tunable synapse behaviors, including the high paired-pulse facilitation of 236% and an obvious transition from short-term plasticity to long-term plasticity. The high recognition rate of 93.9% is achieved with dual-mode modulation of light and electrical pulses. The ferroelectric semiconductor floating-gate design opens up a strategy to realize the light-tunable field effect of Fe-FETs for photo-synapse.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.