通过异外延集成在硅上设计和优化 InAs 波导集成光电探测器，以实现中红外硅光子技术

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Journal Pub Date : 2024-08-27 DOI:10.1109/JPHOT.2024.3450091

Hua Ge;Hao Luo;Sheng-Yi Wang;Xiang Li;Pei Liu;Shi Pu;Ning Xu;Bo-Wen Jia

{"title":"通过异外延集成在硅上设计和优化 InAs 波导集成光电探测器，以实现中红外硅光子技术","authors":"Hua Ge;Hao Luo;Sheng-Yi Wang;Xiang Li;Pei Liu;Shi Pu;Ning Xu;Bo-Wen Jia","doi":"10.1109/JPHOT.2024.3450091","DOIUrl":null,"url":null,"abstract":"Waveguide-integrated photodetectors (PDs) play a crucial role in mid-infrared (MIR) silicon photonics, serving vital functions in sensing and communication applications. III-V semiconductors are widely used in MIR PDs, and many state-of-the-art III-V PDs on Si still require complicated integration methods. Heteroepitaxial growth technology is a competitive approach for large-scale integration; however, buffers capable of simultaneously achieving heteroepitaxial growth and optical coupling are limited in the MIR region. In this paper, we report a waveguide-integrated InAs PD on Si, incorporating a GaAs/Ge buffer design based on interfacial misfit (IMF) technology. We optimize the geometric structure and calculate the optoelectronic properties at a wavelength of 3 μm. For our simulated parameters, the optimal PD achieves a responsivity of 2.77 A/W and a detectivity of 4.68×10\n9\n cm·Hz\n1/2\n·W\n-1\n at -1V. This work suggests a promising avenue to further develop high-detectivity and high-speed PDs for MIR silicon photonics.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 5","pages":"1-10"},"PeriodicalIF":2.1000,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10648999","citationCount":"0","resultStr":"{\"title\":\"Design and Optimization of InAs Waveguide- Integrated Photodetectors on Silicon via Heteroepitaxial Integration for Mid- Infrared Silicon Photonics\",\"authors\":\"Hua Ge;Hao Luo;Sheng-Yi Wang;Xiang Li;Pei Liu;Shi Pu;Ning Xu;Bo-Wen Jia\",\"doi\":\"10.1109/JPHOT.2024.3450091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Waveguide-integrated photodetectors (PDs) play a crucial role in mid-infrared (MIR) silicon photonics, serving vital functions in sensing and communication applications. III-V semiconductors are widely used in MIR PDs, and many state-of-the-art III-V PDs on Si still require complicated integration methods. Heteroepitaxial growth technology is a competitive approach for large-scale integration; however, buffers capable of simultaneously achieving heteroepitaxial growth and optical coupling are limited in the MIR region. In this paper, we report a waveguide-integrated InAs PD on Si, incorporating a GaAs/Ge buffer design based on interfacial misfit (IMF) technology. We optimize the geometric structure and calculate the optoelectronic properties at a wavelength of 3 μm. For our simulated parameters, the optimal PD achieves a responsivity of 2.77 A/W and a detectivity of 4.68×10\\n9\\n cm·Hz\\n1/2\\n·W\\n-1\\n at -1V. This work suggests a promising avenue to further develop high-detectivity and high-speed PDs for MIR silicon photonics.\",\"PeriodicalId\":13204,\"journal\":{\"name\":\"IEEE Photonics Journal\",\"volume\":\"16 5\",\"pages\":\"1-10\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-08-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10648999\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10648999/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10648999/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

波导集成光电探测器（PD）在中红外（MIR）硅光子学中发挥着至关重要的作用，在传感和通信应用中发挥着重要功能。III-V 半导体被广泛应用于中红外光电探测器，而许多最先进的硅基 III-V 光电探测器仍然需要复杂的集成方法。异外延生长技术是一种具有竞争力的大规模集成方法；然而，能够同时实现异外延生长和光耦合的缓冲器在中近红外区域却很有限。在本文中，我们报告了一种波导集成硅基 InAs PD，其中采用了基于界面错位（IMF）技术的 GaAs/Ge 缓冲器设计。我们优化了几何结构，并计算了 3 μm 波长下的光电特性。对于我们的模拟参数，最佳 PD 在 -1V 时的响应率为 2.77 A/W，探测率为 4.68×109 cm-Hz1/2-W-1。这项工作为进一步开发用于中红外硅光子学的高探测率和高速 PD 提供了一条前景广阔的途径。

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Design and Optimization of InAs Waveguide- Integrated Photodetectors on Silicon via Heteroepitaxial Integration for Mid- Infrared Silicon Photonics

Waveguide-integrated photodetectors (PDs) play a crucial role in mid-infrared (MIR) silicon photonics, serving vital functions in sensing and communication applications. III-V semiconductors are widely used in MIR PDs, and many state-of-the-art III-V PDs on Si still require complicated integration methods. Heteroepitaxial growth technology is a competitive approach for large-scale integration; however, buffers capable of simultaneously achieving heteroepitaxial growth and optical coupling are limited in the MIR region. In this paper, we report a waveguide-integrated InAs PD on Si, incorporating a GaAs/Ge buffer design based on interfacial misfit (IMF) technology. We optimize the geometric structure and calculate the optoelectronic properties at a wavelength of 3 μm. For our simulated parameters, the optimal PD achieves a responsivity of 2.77 A/W and a detectivity of 4.68×10 ⁹ cm·Hz ^1/2 ·W ^-1 at -1V. This work suggests a promising avenue to further develop high-detectivity and high-speed PDs for MIR silicon photonics.

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来源期刊

IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

4.50

自引率

8.30%

发文量

489

审稿时长

1.4 months

期刊介绍： Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.