一维光伏半导体硒的异常缺陷特性

IF 4.3 2区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Chemical Communications Pub Date : 2024-09-03 DOI:10.1039/d4cc03174a

Zongbao Li , Xiaoyan An , Xia Wang , Wenbo Lu , Xin Wen , Xing Zhang , Ding-Jiang Xue

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引用次数: 0

摘要

缺陷容限在光伏吸收器中至关重要。在此，我们报告了三方硒（t-Se）因硒的 p-p 耦合而呈现出一种类似于包晶的反键价带最大值。这导致了主要硒空位缺陷的浅层性质。我们进一步揭示了硒固有点缺陷的独特缺陷自愈特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium†

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Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium†

Defect tolerance is crucial in photovoltaic absorbers. Here we report that trigonal selenium (t-Se) exhibits a perovskite-like antibonding valence band maximum arising from Se p–p coupling. This results in the shallow nature of dominant Se vacancy defects. We further reveal the unique defect self-healing characteristic of Se intrinsic point defects.

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来源期刊

Chemical Communications 化学-化学综合

CiteScore

8.60

自引率

4.10%

发文量

2705

审稿时长

1.4 months

期刊介绍： ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.