掺铬钙铁氧体纳米粒子的结构、磁学和电学特性

IF 3.8 Q2 CHEMISTRY, PHYSICAL
R. UmashankaraRaja , H.C. Manjunatha , Y.S. Vidya , E. Krishnakanth , R. Munirathnam , K.M. Rajashekara , S. Manjunatha
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引用次数: 0

摘要

采用溶液燃烧法合成了掺杂铬(10-50 摩尔%)的钙铁氧体纳米粒子,该方法使用柑橘柠檬提取物作为还原剂,然后在 500 摄氏度下进行煅烧。煅烧后的样品采用了各种表征技术。铬掺杂产生的布拉格反射证实形成了奇异的正方体钙铁氧体相。使用舍勒法和 W-H 图法测定的晶体尺寸随着掺杂浓度的增加而减小。表面形貌显示出具有不规则形状和尺寸的团聚纳米颗粒,并伴有孔隙和空隙。能带隙随掺杂剂浓度的增加而增大,从 2.82 到 2.93 eV。磁滞回线分析提供的磁性参数包括饱和磁化(Ms)、剩磁(Mr)和矫顽力(Hc)。随着掺杂剂浓度的增加,Ms 和 Hc 在 CaFe2O4 NPs 中 cr3+ 浓度为 30 mol% 时达到最大值。在较低频率下,频率相关电导率呈线性增长。低频时半圆的出现表明符合阻抗行为的科尔-科尔公式。此外,还详细讨论了介电性质。值得注意的是,随着掺杂浓度的增加,介电常数从 4.2 降至 2.74。这些独特的特性使样品成为存储器件和高频器件应用的合适候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

The structural, magnetic and electrical properties of chromium doped calcium ferrite nanoparticles

The structural, magnetic and electrical properties of chromium doped calcium ferrite nanoparticles

Calcium ferrite nanoparticles doped with Chromium (10-50 mol %) are synthesized using the solution combustion method, employing citrus Lemon extract as a reducing agent, followed by a calcination process at 500oC. Various characterization techniques are employed on the calcined samples. The Bragg reflections resulting from Chromium doping confirm the formation of a singular orthorhombic calcium ferrite phase. Crystallite sizes determined using both Scherrer’s and W-H plot methods found to be decreases with increase in dopant concentration. The surface morphology showcases agglomerated nanoparticles with irregular shapes and sizes, accompanied by pores and voids. The energy band gap found to be increases with increase in dopant concentration from 2.82 to 2.93 eV. The hysteresis loop analysis provides magnetic parameters including saturation magnetization (Ms), remanence (Mr), and coercivity (Hc). As the dopant concentration increases, Ms and Hc found to be maximum at 30 mol% cr3+ concentration in CaFe2O4 NPs. Linear increase in frequency-dependent conductivity at lower frequencies was observed. The presence of semicircles at low frequencies signifies compliance with the Cole-Cole formula for impedance behavior. Additionally, a detailed discussion on dielectric properties is presented. Notably, the dielectric constant decreases from 4.2 to 2.74 with an increase in dopant concentration. These distinctive attributes position the samples as suitable candidates for memory devices as well as high-frequency device applications.

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来源期刊
Chemical Physics Impact
Chemical Physics Impact Materials Science-Materials Science (miscellaneous)
CiteScore
2.60
自引率
0.00%
发文量
65
审稿时长
46 days
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