基于 MoS2/PZT 铁电场效应晶体管的光电调制人工突触,用于神经形态计算系统

IF 11.2 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, Sejoon Lee
{"title":"基于 MoS2/PZT 铁电场效应晶体管的光电调制人工突触,用于神经形态计算系统","authors":"Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, Sejoon Lee","doi":"10.1016/j.jmst.2024.06.058","DOIUrl":null,"url":null,"abstract":"<p>To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS<sub>2</sub>/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (<em>i.e</em>., both electrical and optical pulses simultaneously) as well as single stimuli (<em>i.e</em>., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZr<em><sub>x</sub></em>Ti<sub>1−</sub><em><sub>x</sub></em>O<sub>3</sub> (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS<sub>2</sub>. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95% pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.</p>","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":null,"pages":null},"PeriodicalIF":11.2000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system\",\"authors\":\"Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, Sejoon Lee\",\"doi\":\"10.1016/j.jmst.2024.06.058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS<sub>2</sub>/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (<em>i.e</em>., both electrical and optical pulses simultaneously) as well as single stimuli (<em>i.e</em>., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZr<em><sub>x</sub></em>Ti<sub>1−</sub><em><sub>x</sub></em>O<sub>3</sub> (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS<sub>2</sub>. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95% pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.</p>\",\"PeriodicalId\":16154,\"journal\":{\"name\":\"Journal of Materials Science & Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":11.2000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science & Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.jmst.2024.06.058\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science & Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmst.2024.06.058","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

为了提出一种先进的高性能光电突触器件方案,我们在本文中展示了基于二维半导体沟道的铁电场效应晶体管(FeFET)架构上的电驱动和/或光驱动多方面突触功能。该器件是以 MoS2/PZT FeFET 的形式制造的,其突触权重可通过双重刺激(即同时使用电脉冲和光脉冲)和单一刺激(即单独使用电脉冲或光脉冲)进行有效控制。这可能归因于 PbZrxTi1-xO3 (PZT) 中的电脉冲可调强铁电极化以及 MoS2 中的极化场增强持续光电导效应。此外,还证实了所提出的装置具有很高的活性,实现了约 95% 的模式识别准确率。这些结果证实了基于二维半导体沟道的 FeFET 器件作为高性能光电突触平台的巨大潜力,标志着向实现先进的神经形态计算系统迈出了关键的一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrxTi1−xO3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95% pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Materials Science & Technology
Journal of Materials Science & Technology 工程技术-材料科学:综合
CiteScore
20.00
自引率
11.00%
发文量
995
审稿时长
13 days
期刊介绍: Journal of Materials Science & Technology strives to promote global collaboration in the field of materials science and technology. It primarily publishes original research papers, invited review articles, letters, research notes, and summaries of scientific achievements. The journal covers a wide range of materials science and technology topics, including metallic materials, inorganic nonmetallic materials, and composite materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信