沙漏晶体管一种可抵御全电离剂量辐射的替代性改进 MOS 结构

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-08-26 DOI:10.1016/j.mejo.2024.106391

Carlos Alfredo Pelcastre Ortega, Mónico Linares Aranda

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引用次数: 0

摘要

本文介绍了一种名为 "沙漏晶体管 "的新型 MOSFET 布局，旨在改善其在总电离剂量（TID）效应下的电气性能。这种新型耐辐射器件的基础是增加寄生沟道电阻、利用纵向转角效应（LCE）改变电场以及降低中央栅极区域内的沟道电阻。该辐射防护 MOS 结构设计是在 130 纳米 CMOS 体工艺中实现的，并通过三维物理模型对其性能进行了仿真分析。将所提出的沙漏晶体管与矩形、菱形、狗骨和 H 门器件进行了比较，结果显示辐射后 Ioff 电流分别降低了 8.77 倍、4.6 倍、1.85 倍和 13.7 倍；辐射前归一化饱和电流分别增加了 2.29 倍、1.04 倍、1.58 倍和 1.52 倍，而栅极面积分别增加了 4.84 倍、1 倍、2.47 倍和 2.03 倍。

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Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation

This paper presents a novel MOSFET layout named the “hourglass transistor”, aimed to improve its electrical behavior under Total Ionizing Dose (TID) effects. The new radiation-tolerant device is based on augmenting parasitic channel resistance, alteration of the electric field by the longitudinal corner effect (LCE), and reducing channel resistance within the central gate region. The radiation-robust MOS structure design was implemented in a 130 nm CMOS bulk process and its performance was analyzed through simulations using 3D physical models. The proposed hourglass transistor was compared with rectangular, diamond, dog bone and H-gate devices, showing a reduction in the post-radiation $I_{o f f}$ current of 8.77, 4.6, 1.85 and 13.7 times, respectively; and a pre-radiation normalized saturation current of 2.29, 1.04, 1.58 and 1.52 times greater with an increase of 4.84, 1, 2.47 and 2.03 times the gate area, respectively.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.