可调谐接触电化场效应晶体管的三电势研究

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Michael McKinlay;Mahdieh Shojaei Baghini;Manuel Pelayo Garcia;Bhavani Yalagala;Hadi Heidari;Des Gibson;Carlos Garcia Nuñez
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引用次数: 0

摘要

摩擦电子学是一个研究三电与半导体耦合的原创领域。接触电化场效应晶体管(CE-FET)是一种前景广阔的摩擦电子器件,能够在不久的将来为人机界面、传感平台和有源柔性电子器件实现新型机电设备。这封信介绍了 CE-FET 的设计、制造和表征,CE-FET 包含一个三电纳米发电机(TENG),分别使用氧化锌和聚对苯二甲酸乙二醇酯作为三电正材料和三电负材料,并与一个驱动型金属氧化物半导体场效应晶体管(mosfet)耦合。通过优化所选材料的摩擦电特性,并在频率为 2 至 10 Hz、电极距离为 2 至 10 mm 的条件下运行 TENG,已证明可通过外部机械力调制 mosfet 的输出特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of Triboelectric Potential for Tunable Contact-Electrification Field-Effect Transistors
Tribotronics is an original field studying the coupling bet- ween triboelectricity and semiconductors. Contact-electrification field-effect transistors (CE-FETs) have emerged as promising tribotronic devices capable of implementing novel electromechanical devices for human–robot interfacing, sensing platforms, and active flexible electronics in the near future. This letter presents the design, fabrication, and characterization of CE-FETs consisting of a triboel- ectric nanogenerator (TENG)—using zinc oxide and polyethylene terephthalate as tribopositive and tribonegative materials, respecti- vely, coupled to a driven metal–oxide–semiconductor field-effect transistor ( mosfet ). Optimizing the triboelectric properties of selected materials and operating TENG with frequencies ranging between 2 and 10 Hz and electrode distances ranging from 2 to 10 mm, the modulation of the output characteristics of the mosfet via external mechanical forces has been demonstrated.
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来源期刊
IEEE Sensors Letters
IEEE Sensors Letters Engineering-Electrical and Electronic Engineering
CiteScore
3.50
自引率
7.10%
发文量
194
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