{"title":"二维半导体的持续挑战","authors":"","doi":"10.1038/s41928-024-01241-w","DOIUrl":null,"url":null,"abstract":"The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 8","pages":"621-621"},"PeriodicalIF":33.7000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01241-w.pdf","citationCount":"0","resultStr":"{\"title\":\"Continuing challenges in 2D semiconductors\",\"authors\":\"\",\"doi\":\"10.1038/s41928-024-01241-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":\"7 8\",\"pages\":\"621-621\"},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.nature.com/articles/s41928-024-01241-w.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.nature.com/articles/s41928-024-01241-w\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.nature.com/articles/s41928-024-01241-w","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.
期刊介绍:
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.