具有数字输出和内置能量收集电路的光伏发电温度传感芯片

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yen-Ju Lin;Jian-Zhou Yan;Kai-Min Chang;Chia-Ling Wei
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引用次数: 0

摘要

本文提出了一种内置光伏(PV)能量收集电路的温度传感芯片。温度传感电路包括一个基于双极结晶体管 (BJT) 的传感电路、一个增益级和一个逐次逼近寄存器 (SAR) 模数转换器 (ADC),而能量收集电路则是一个带有扰动和观测最大功率点跟踪电路的升压直流-直流转换器。这项工作的主要目标是成功实现芯片集成。据我们所知,这是首个将温度传感器、ADC、能量收集电路、时钟发生器和其他相关电路集成到单个芯片中的芯片。传统的温度传感器芯片通常由稳定的电源电压供电(物联网设备可能无法获得稳定的电源电压),而我们提出的芯片则由内置升压转换器供电,其输出电压不可避免地会产生纹波。尽管如此,我们的温度传感芯片仍具有出色的性能。此外,内置的时钟发生器可以产生亚赫兹频率的信号,这在低功耗要求下是很难实现的。该芯片采用台积电 0.18-μm 1P6M 混合信号工艺制造。测量结果表明,拟议芯片的感应温度范围为 -20 °C 至 80 °C,分辨率为 0.17 °C。误差在 ±0.8 °C 以内,线性度 R2 达到 0.99988。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photovoltaic-Energy-Powered Temperature-Sensing Chip With Digital Output and Built-in Energy Harvesting Circuit
In this letter, a temperature-sensing chip with a built-in photovoltaic (PV) energy harvesting circuit is proposed. The temperature-sensing circuit includes a bipolar-junction-transistor (BJT)-based sensing circuit, a gain stage, and a successive approximation register (SAR) analog-to-digital converter (ADC), while the energy harvesting circuit is a boost dc–dc converter with a perturbation-and-observation maximum power point tracking circuit. The main goal of this work is successful chip integration. To the best of our knowledge, this is the first chip that integrates a temperature sensor, an ADC, an energy harvesting circuit, a clock generator, and other related circuits into a single chip. While conventional temperature-sensing chips are typically powered by a stable power supply voltage (which may not be available in Internet of Things devices), the proposed chip is powered by the built-in boost converter, whose output voltage inevitably has ripples. Despite this, the performance of our temperature-sensing chip is excellent. In addition, the built-in clock generator can generate signals with a subhertz frequency, which is difficult to achieve with low-power requirements. The chip was fabricated using the TSMC 0.18-μm 1P6M mixed-signal process. The measured results indicate that the sensed temperature of the proposed chip ranges from –20 °C to 80 °C with 0.17 °C resolution. The error is within ±0.8 °C, and R 2 representing linearity reaches 0.99988.
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来源期刊
IEEE Sensors Letters
IEEE Sensors Letters Engineering-Electrical and Electronic Engineering
CiteScore
3.50
自引率
7.10%
发文量
194
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