{"title":"在富含 N2 的大气中低温制备铝箔上的 BiFeO3 薄膜。","authors":"Jing Yan","doi":"10.3390/nano14161343","DOIUrl":null,"url":null,"abstract":"<p><p>To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO<sub>3</sub> films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal-organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO<sub>3</sub> films was assessed at 440 ± 5 °C. By using a N<sub>2</sub>-rich atmosphere, a large remnant polarization (<i>P<sub>r</sub></i>~78.1 μC/cm<sup>2</sup> @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the <i>P-E</i> loop, excellent charge-retaining ability of up to 1.0 × 10<sup>3</sup> s and outstanding fatigue resistance after 1.0 × 10<sup>9</sup> switching cycles could be observed. By adopting a N<sub>2</sub>-rich atmosphere and aluminum foil substrates, acceptable electrical properties (<i>P<sub>r</sub></i>~70 μC/cm<sup>2</sup> @ 1118.1 kV/cm) of the BiFeO<sub>3</sub> films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":null,"pages":null},"PeriodicalIF":4.4000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11357338/pdf/","citationCount":"0","resultStr":"{\"title\":\"Low-Temperature Fabrication of BiFeO<sub>3</sub> Films on Aluminum Foils under a N<sub>2</sub>-Rich Atmosphere.\",\"authors\":\"Jing Yan\",\"doi\":\"10.3390/nano14161343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO<sub>3</sub> films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal-organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO<sub>3</sub> films was assessed at 440 ± 5 °C. By using a N<sub>2</sub>-rich atmosphere, a large remnant polarization (<i>P<sub>r</sub></i>~78.1 μC/cm<sup>2</sup> @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the <i>P-E</i> loop, excellent charge-retaining ability of up to 1.0 × 10<sup>3</sup> s and outstanding fatigue resistance after 1.0 × 10<sup>9</sup> switching cycles could be observed. By adopting a N<sub>2</sub>-rich atmosphere and aluminum foil substrates, acceptable electrical properties (<i>P<sub>r</sub></i>~70 μC/cm<sup>2</sup> @ 1118.1 kV/cm) of the BiFeO<sub>3</sub> films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications.</p>\",\"PeriodicalId\":18966,\"journal\":{\"name\":\"Nanomaterials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11357338/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomaterials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3390/nano14161343\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/nano14161343","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Low-Temperature Fabrication of BiFeO3 Films on Aluminum Foils under a N2-Rich Atmosphere.
To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal-organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO3 films was assessed at 440 ± 5 °C. By using a N2-rich atmosphere, a large remnant polarization (Pr~78.1 μC/cm2 @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the P-E loop, excellent charge-retaining ability of up to 1.0 × 103 s and outstanding fatigue resistance after 1.0 × 109 switching cycles could be observed. By adopting a N2-rich atmosphere and aluminum foil substrates, acceptable electrical properties (Pr~70 μC/cm2 @ 1118.1 kV/cm) of the BiFeO3 films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications.
期刊介绍：
Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.
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